摘要
多孔硅在室温下发出光致荧光展现了硅用作光电子材料和显示技术材料的前景。掺入希土元素可以改善硅的发光性能。本文首次报道多孔硅掺希土的一种新的电化学掺杂方法——恒电位电解，和一种希土硝酸盐－支持电解质－有机溶剂的新电解体系。这一方法和体系的特点是通过采用适当外加电压来控制电解产物，提高掺入的希土浓度，提高发光强度；同时可避免析出使发光不稳定的产物，提高发光稳定性。优化了阳极氧化制备多孔硅的条件和阴极还原制备掺镨多孔硅的条件（镨化合物浓度、溶剂、离子强度、电解电压、时间），获得了光致发光强度高于多孔硅的掺镨多孔硅，并讨论了多孔硅和掺镨多孔硅的光致发光机制。
Porous silicon (PS) was prepared by anodically etching of n type silicon in hydrofluoric acid solution The optimum etching conditions were fixed A new electrochemical doping (ECD) approach, constant potential electrolysis, and a new electrolyte system, praseodymium nitrate supporting electrolyte organic solvent solution, for doping of porous silicon (PS) with praseodymium were reported By this new ECD approach and new electrolyte system, the doping products were well controlled, and Pr doped PS (PRPS) was found to emit much intenser visible photolumionescence with blue shift in wavelength and higher luminescence stability at room temperature than that for corresponding PS wafer The effects of solvents, applied voltage, concentration of praseodymium nitrate and doping time on photoluminescence of PRPS were investigated, and the optimum doping conditions were fixed The luminescence mechanisms for PS and PRPS were discussed
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
1999年第1期29-34,共6页
Chinese Journal of Inorganic Chemistry
基金
香港浸会大学研究基金
广东省自然科学基金
关键词
掺镨多孔硅
多孔硅
PRPS
光致发光材料
porous silicon praseodymium doped porous silicon constant potential electrolysis photoluminescence
