期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

紫外光照射对掺铝氧化锌薄膜导电和透光性质的影响 被引量：1

Effects of UV Light Irradiation on Conductive and Transmittance Properties of AZO Films
在线阅读 下载PDF
导出
摘要 本文采用光助溶胶—凝胶法制备了掺铝氧化锌(AZO)透明导电薄膜.研究了紫外光照射对薄膜导电性和透光性质的影响.结果表明:光照使薄膜的导电性显著提高,且光照后薄膜方阻的降低幅度随薄膜晶粒尺寸的减小而逐渐增加;而随着紫外光照射时间延长,薄膜的紫外吸收边蓝移,近红外区透光率降低.以上实验现象可能与表面吸附氧解吸引起的载流子浓度增加、迁移率升高以及分层退火处理形成的薄膜结构有关. Transparent conducting aluminum-doped zinc oxide （AZO） thin films were prepared by the UV light-assisted sol-gel method in this paper. The effects of UV light irradiation on conductive and transmittance properties of the AZO films were further studied. It is demonstrated that the con- ductivity of the AZO films is increased markedly by UV light irradiation, and the ratio of sheet re- sistance before and after irradiation increases with decreasing the microcrystal size in the film. Fur- ther more, the UV absorption edge shifts towards shorter wavelength and the NIR transmission de- creases with prolonging the UV irradiation. These experimental phenomena are attributed to the surface oxygen desorption which lead to the increase in the carrier concentration and in mobility of carriers and the layer-annealing structure of the AZO film.
作者 张天宝 李金培
机构地区 中国科学院理化技术研究所 中国科学院研究生院
出处 《影像科学与光化学》 CAS CSCD 北大核心 2010年第2期95-103,共9页 Imaging Science and Photochemistry
关键词 掺铝氧化锌薄膜 紫外光照射 溶胶-凝胶 AZO thin film UV irradiation sol-gel
分类号 O484 [理学—固体物理]
  • 相关文献

参考文献16

  • 1Zhou Y, Kelly P J, Postill A, et al. The characteristics of aluminium-doped zinc oxide fihns prepared by pulsed magnetron sputtering from powder targets[J ]. Thin Solid Films, 2004, 447-448: 33-39.
  • 2Kim H, Pique A, Horwitz J S, et al. Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-ernitting devices[J ]. Thin Solid Films, 2000,377-378: 798-802.
  • 3Musat V, Teixeira B, Fortunato E, et al. M-doped ZnO thin films by sol-gel method [ J ]. Surface and Coatings Technology, 2004,180-181 : 659-662.
  • 4Lin K M, Tsai P. Growth mechanism and characterization of ZnO: A1 multi-layered thin films by sol-gel technique [J]. Thin Solid Films,2007,515:8601-8604.
  • 5Radhouane B H T. Structural and electrical properties of aluminum-doped zinc oxide films prepared by sol-gel process [J ]. Journal of the European Ceramic Societ, 2005,25 : 3301-3306.
  • 6Mridha S, Basak D. Effect of thickness on the structural, electrical and optical properties of ZnO films[J ]. Materials Research Bulletin, 2007,42 : 875-882.
  • 7Barnes T M, Leaf J, Fry C, et al. Room temperature chemical vapor deposition of c-axis ZnO[ J ]. Journal of Crystal Growth ,2005,274: 412- 417.
  • 8Mohammad M T, Hashim A A, AI-Maamory M H. Highly conductive and transparent ZnO thin films Prepared by spray pyrolysis technique[J ]. Materials Chemistry and Physics, 2006,99 : 382-387.
  • 9Kuo S Y, Chen W C, Lai F I, et al. Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films[J ]. Journal of Crystal Growth, 2006,287 : 78-84.
  • 10Zhou H M, Yi D Q, Yu Z M, et al. Preparation of aluminum doped zinc oxide films and the study of their microstructure, electrical and optical properties[J]. Thin Solid Films, 2007,518: 6909-6914.

二级参考文献49

  • 1葛春桥,夏志林,郭爱云.掺杂浓度对AZO薄膜结构和性能的影响[J].电子元件与材料,2004,23(9):31-33. 被引量：5
  • 2Bac S H,Lee S Y.Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition[J].Mater.Sci.Eng.,2000,B71:301.
  • 3Bangall D M,Chen Y F,Zhu Z,et al.Optical pumped lasing of ZnO at room temperature[J].Appl.Phys.Lett.,1997,70(17):2 230-2 232.
  • 4Zu P,Tang Z K,Kim K S,et al.Ultraviolet spontaneous and stimulated emission from ZnO microtcrystalline thin films at room temperature[J].Solid State Com.,1997,103(8):459-463.
  • 5Liu Y,Gorla C R,Liang S,et al.Ultraivolet detectors based on epitaxial ZnO films grown by MOCVD[J].J.Electron.Mater.,2000,29(1):69-74.
  • 6Liang S,Sheng H,Liu Y,et al.ZnO Schottky ultraviolet photodetectors[J].J.Cryst.Growth,2001,225:110-118.
  • 7Ohta H,Kamiya M,Kamiya T,et al.UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors,p-NiO/n-ZnO[J].Thin Solid Films,2003,445:317-321.
  • 8Gupta R K,Shridhar N,Katiyar M.Structure of ZnO films prepared by oxidation metallic Zinc[J].Materials Science in Semiconductor Processing,2002,5:11-15.
  • 9Jin B J,Bae S H,Lee S Y,et al.Effects of native defects on optical and electrical properties of ZnO prepared by pulsed lases deposition[J].Mater.Sci.Eng.B,2000,71(1-3):301-305.
  • 10Kadlec S,Quaeyhaegens C,Knuyt G,et al.Energy distribution of ions in an unbalanced magnetron plasma measured with energy-resolved mass spectrometry[J].Surface and Coating Technol.,1997,89:177-184.

共引文献24

同被引文献15

  • 1Boen Houng, Cheng-Lou Huang, Song-Yuan Tsai. Effect of the pH on the growth and properties of sol-gel derived boron-doped ZnO transparent conducting thin film[J]. Journal of Crystal Growth, 2007, 307:328-333.
  • 2C. Lennon, R.B. Tapia, R. Kodama, et al. Effects of Annealing in a Partially Reducing Atmosphere on Sputtered Al-doped ZnO Thin Films[J]. Journal of Electronic Materials, 2009, 38:1568-1573.
  • 3Sookjoo Kim, Wan In Lee, El-Hang Lee, et al. Dependence of the resistivity and the transmittance of sputterdeposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature[J]. J. Mater. Sci., 2007, 42:4845-4849.
  • 4Ji Bong Park, Se Hun Park, Pung Keun Song. Electrical and structural properties of In-doped ZnO films deposited by RF superimposed DC magnetron sputtering system[J]. J. Phys, Chem. Solids, 2010,71:669-672.
  • 5J.M. Lin, Y.Z. Zhang , Z.Z. Ye, et al. Nb-doped ZnO transparent conducting films fabricated by pulsed laser deposition[J].Appl. Surf. Sci., 2009, 255:6460-6463.
  • 6Ruchika Sharma, Kiran Sehrawat, R.M. Mehra. Epitaxial growth of highly transparent and conducting Sc-doped ZnO films on c-plane sapphire by sol gel process without buffer[J]. Current Applied Physics, 2010, 10:164-170.
  • 7Jeng-Lin Chung, Jyh-Chen Chen , Chung-Jen Tseng.The influence of titanium on the properties of zinc oxide films deposited by radio frequency magnetron sputtering[J]. Appl. Surf. Sei., 2008, 254:2615-2620.
  • 8Zhou Y, Kelly P J, Postill A, et al. The characteristics of aluminium-doped zinc oxide films prepared by pulsed magnetron sputtering from powder targets[J]. Thin Solid Films, 2004,447-448:33-39.
  • 9Kim H, Pique A, Horwitz J.S,et al. Effect of aluminum doping on zinc oxide thin fihns grown by pulsed laser deposition for organie light-emitting devices[J]. Thin Solid Films, 2000,377-378: 798-802.
  • 10Keh-moh Lin, Paijay Tsaio Growth mechanism and characterization of ZnO: AI multi-layered thin films by sol- gel technique[J]. Thin Solid Fihns, 2007, 515: 8601-8604.

引证文献1

二级引证文献3

影像科学与光化学
2010年 第2期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部