摘要
采用脉冲激光沉积方法在单晶Si(100)衬底上制备出c轴取向的Zn1-xMgxO单晶薄膜,通过荧光光谱仪研究了薄膜的光致发光特性.实验结果表明,Mg含量增加,Zn1-xMgxO单晶薄膜的紫外发光峰蓝移,发光峰强度减弱,缺陷发光强度增强.同时发现,由于Mg的掺杂,引入了一些束缚能较大的局域束缚态.对于氧气氛下制备的样品,实验发现紫外峰和绿光带发光峰同时增强,但是R值减小,紫外峰红移.对绿光发光机理研究发现,绿光发光带主要与锌空位、氧间隙(Oi)或锌位氧(OZn)等缺陷有关,它是由多个缺陷发光峰组成,各缺陷发光峰强度相对变化导致了绿光发光带的整体移动.
Single-crystalline Zn1-xMgxO thin films with c-axis orientation have been deposited on Si（100） substrates by pulsed laser deposition. The photoluminescence characteristics of the films are studied by fluorescence spectrometer. The results show that the ultraviolet emission peak has a blue shift and the intensity weakens with the increasing content of Mg. At the same time, the intensity of defect emission increases with increasing content of Mg. Some local bound states were introduced by Mg-doping. For the samples grown in oxygen atmosphere, the results show that beth the ultraviolet emission peak and green emission peak are enhanced, but the value of R reduced and the ultraviolet emission peak has a red shift. The study of green-emitting mechanism indicated that the green emission band mainly depends on zinc vacancy, substitutional O on the zinc site （Ozn） and interstitial oxygen vacancies （Oi） . Green emission band is composed of many defect-peaks, and its movement as a whole mobile is due to the change of relative intensities of individual defect-peaks.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第8期5836-5841,共6页
Acta Physica Sinica
基金
安徽省自然科学基金(批准号:090414177)资助的课题~~
