摘要
采用常规的射频等离子体增强化学气相沉积技术制备了可以用于微晶硅薄膜太阳电池的n型的掺杂窗口层材料.通过掺杂窗口层材料在电池中的应用发现:微晶硅薄膜太阳电池由于其电子和空穴的迁移率相差比较小而显示出磷掺杂的n型的微晶硅材料也可以像硼掺杂的p型的微晶硅材料一样,可作为微晶硅薄膜太阳电池的窗口层材料;两种窗口层制备电池的效率差别不大,而且量子效率(QE)测试结果显示两种电池的n/i和p/i界面没有明显的区别;电池的双面不同波长拉曼光谱的测试结果给出:不论是n/i/p还是p/i/n型的电池,在起始生长本征层阶段均存在一定的非晶孵化层.最后,通过优化界面孵化层,单结n方向太阳光入射的n/i/p型的微晶硅太阳电池的效率达到了7.7%.
N-type phosphors doping layer as the window layer of microcrystalline silicon solar ceils has been fabricated using conversional radio frequency plasma enhanced chemical vapor deposition. Because of hole and electron mobilities are of the same order for microcrystalline silicon thin film, microcrystalline silicon solar cells based on n-type doping layer as the window layer almost show the same efficiency as microcrystailine silicon solar cells based on p-type doping layer as the window layer. In addition, the results of quantum efficiency are also consistent with the I-V measurement results. Bilateral Raman measurement results using laser light of different wavelength indicated that p/i or n/i interface incubation layer has a disadvantageous influence on the current density of the solar cells. Through the optimization of n/i interface incubation layer, glass/ZnO/n/i/p/Al microcrystalline silicon solar cell with 7.7 % conversion efficiency has been fabricated.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第7期5041-5045,共5页
Acta Physica Sinica
基金
国家高技术研究发展计划(批准号:2007AA05Z436)
天津科技支撑项目(批准号:08ZCKFGX03500)
国家重点基础研究发展计划项目(批准号:2006CB202602,2006CB202603)
国家自然科学基金(批准号:60506003)
南开大学博士启动基金(批准号:J02031)
科技部国际合作重点项目(批准号:2006DFA62390)
教育部新世纪人才计划资助的课题~~
