期刊文献+

S掺杂纤锌矿ZnO晶体结构及电子性质的第一性原理研究 被引量:2

First-principles study of the crystal structures and electronic properties of S doped wurtzite ZnO
在线阅读 下载PDF
导出
摘要 本文采用基于密度泛函理论的CASTEP模拟软件研究了本征纤锌矿ZnO、ZnS以及S掺杂ZnO所形成的纤锌矿ZnO1-xSx化合物的晶体结构及电子性质,计算结果显示纤锌矿ZnO1-xSx化合物的晶格常数随S的掺杂量的增加呈线性增加关系;S 3p态电子决定价带顶的位置,且基本上不因S含量的改变而发生移动;Zn 4s态电子决定导带底的位置,并随S掺入量的增加先向低能端移动而后向高能端移动。研究发现在ZnO1-xSx化合物中Zn和S主要靠共价键结合,而Zn和O主要靠离子键结合,随S掺入量的增加Zn-O离子键不断减少,而Zn-S共价键不断增加是造成ZnO1-xSx化合物带隙先减小而后增加的根本原因。 The crystal structures and electronic properties of wurtzite ZnO, ZnS and S doped ZnO have been investigated by using density--functional theory simulating package CASTEP. The calculation results indicate: the crystal constants increase with the quantity of S doping wurtzite ZnO; the top position of the valence band is determined by the S 3p electron state and it does not shift with the thickness of S--doping; the bottom position of the conduction band is determined by the Zn 4s electron state and it can shift to a lower energy position at first and then shift to a higher energy position with increasing S concentrations, the band gap of ZnO1-xSx is least when x is equal to 0.5. It is essential reason that the transformation from Zn--O eleetrovalent bond to Zn--S covalent bond with the thickness of S doping wurtzite ZnO.
出处 《塔里木大学学报》 2009年第2期48-52,共5页 Journal of Tarim University
关键词 密度泛函理论 S掺杂纤锌矿ZnO CASTEP软件包 density functional theory S doped wurtzite ZnO CASTEP package
  • 相关文献

参考文献10

  • 1Sang-Do Han,Ishwar Singh,Devender Singh,You-He Lee,Gaytri Sharma,Chi-Hwan Han.Crystal growth of electroluminescent ZnS:Cu,Cl phos-phor and its TiO2 coating by sol?gel method forthick-film EL device[].Journal of Luminescence.2005
  • 2B.K.Meyer,,A.Polity,,B.Farangis,,Y.He,,D.Hasselkamp,,Th.Kr?mer,,C.Wang.Structuralproperties and bandgap bowing of ZnO1-xSx thinfilms deposited by reactive sputtering[].Applied Physics Letters.2004
  • 3Vurgaftman I,Meyer JR,Ram-Mohan LR.Band parameters for III-V compound semiconductors and their alloys[].Journal of Applied Physics.2001
  • 4Hohenberg P,Kohn W.Inhomogeneous Electron Gas[].Physical Review B Condensed Matter and Materials Physics.1964
  • 5J. P. Perdew,Y. Wang.Accurate and simple density functional for the electronic exchange energy: generalized gradient approximation[].Physical Review B Condensed Matter and Materials Physics.1986
  • 6Perdew JP,Burke K,Ernzerhof M.Generalized gradient approximation made simple[].Physical Review.1996
  • 7John P Perdew,Yue Wang.Accurate and simple analytic representation of the electron-gas correlation energy[].Physical Review.1992
  • 8Vanderbilt D.Soft self-consistent pseudopotentials in a generalized eigenvalue formalism[].Physical Review B Condensed Matter and Materials Physics.1990
  • 9Payne M C,Teter M P,Allan D C,et al.Iterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradients[].Reviews of Modern Physics.1992
  • 10Monkhorst HJ,Pack JD.Special points for Brillouin-zone integrations[].Physical Review B Condensed Matter and Materials Physics.1976

同被引文献16

引证文献2

二级引证文献10

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部