摘要
在分析现有过温保护电路的基础上,针对电路结构复杂、功耗较高、受工艺参数影响较大等缺点提出了一种采用BiCMOS工艺的过温保护电路,电路中不使用电阻和迟滞比较器,通过简单正反馈实现温度的迟滞特性来避免热振荡对芯片带来的危害。采用0.6μm BiCMOS工艺的HSPICE仿真结果表明,该电路能很好地抑制由于电源电压和工艺参数变化造成的热关断阈值点的漂移,适用于各种芯片。
Based on analyzing the existing over temperature protect circuits, and aiming at their structure complexity, high power dissipation and high process sensitivity, a new BiCMOS over temperature protect circuit was presented, which can prevent thermal oscilIation from occurring through simple positive feedback, without resistance and hysteresis comparators. HSPICE simulation with 0.6μm BiCMOS technology shows that the circuit has excellent performance of power rejection and process insensitive and is suitable for many ICs.
出处
《仪表技术与传感器》
CSCD
北大核心
2009年第2期94-95,110,共3页
Instrument Technique and Sensor
基金
西安应用材料创新基金(XA-AM-200707)
西北工业大学研究基金(w018104)
