摘要
采用失重法与铅笔硬度计分析了抛光垫的组分对其溶胀率及干湿态硬度的影响,比较了固结磨料方法与游离磨料方法抛光后硅片的表面粗糙度。结果表明:抛光垫基体的溶胀率随基体中聚乙二醇双丙烯酸酯(PEGDA)或乙氧基化三羟基丙烷三丙酸酯(EO15-TMAPTA)含量的增加而提高;基体的干态硬度随PEGDA含量的增加先有所增大,而后减小,随EO15-TMAPTA含量的增加而增大;湿态下铅笔硬度随PEGDA或EO15-TMAPTA含量的增加而减小;光引发剂量的增加,有利于增大基体的干湿态硬度;固结磨料抛光硅片的去除速率是游离磨料加工的2～3倍,而前者抛光硅片后的表面粗糙度Ra为12.2nm,大于后者的4.32nm。
Analytic scales and pencil hardness tester were employed to analyze the effect of the composition of pad on its swelling ration and hardness. The average surface roughness of wafers polished by fixed abrasive pad（FAP） and conventional pad was compared. Results show that the swelling ratio of FAP rises with the increase of the content of polyethylene glycol diacrylate（PEGDA） or ethoxylated trimethylopropane triacrrylate（EO15-TMAPTA）. The dry pencil hardness of FAP in- creases with the increase of the content of EO15- TMAPTA, while it first increases, then decreases with the increase of the content of PEGDA. Its wet pencil hardness improves increasing the content of PEGDA or EO15-TMAPTA. The photo initiator is helpful to improve its wet and dry pencil hardness. The material removal rate polished with FAP is two or three times as much as that polished with conventional polishing, while the average surface roughness Ra of silicon wafer polished by FAP reaches 12.2nm, and is worse that the latter whose Ra is 4.32nm.
出处
《中国机械工程》
EI
CAS
CSCD
北大核心
2009年第6期723-727,732,共6页
China Mechanical Engineering
基金
国家自然科学基金资助项目(50675104)
江苏省自然科学基金资助项目(BK2006191)
江苏省"六大人才"高峰人才培养资助项目(06-D-024)
