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GaAs/AlGaAs异质结中二维电子气子能带的Landau能级耦合 被引量:1

RESONANT SUBBAND LANDAU LEVEL COUPLING FOR HIGH LYING SUBBANDS OF TWO DIMENSIONAL ELECTRON GASES IN GaAs/AlGaAs HETEROJUNCTION
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摘要 采用栅压比谱技术,在相对较低的磁场下,观察到GaAs/AlGaAs异质结中二维电子气第零子能带的N=1Landau能级与高达第五子能带的N=0Landau能级的共振耦合现象,由此精确测量了各子能带能量间距,并与自洽的理论计算结果相比较.同时,讨论了共振子能带Landau能级耦合所引起的Landau能级分裂大小与子能带量子数的关系. Abstract  The resonant subband Landau level coupling(RSLC) between the N =1 Landau level of the lowest subband and the N =0 Landau level of the subbands with quantum index up to i =5 of two dimensional electron gases in GaAs/AlGaAs heterojunction was observed under relatively low magnetic field.Several intersubband energies were accurately determined. The experimental results were in good agreement with the self consistent calculations including the depolarization shift and exciton like effect corrections.The quantum index dependence of the level splitting due to the RSLC was discussed. 
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 1998年第3期494-501,共8页 Acta Physica Sinica
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参考文献2

  • 1胡灿明,Phys Rev Lett,1996年,76卷,1904页
  • 2胡灿明,博士学位论文,1995年

同被引文献15

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