摘要
用真空共蒸发法制备了 Cu_xTe 薄膜并将其运用于 CdTe 太阳电池中。对薄膜进行了 X 射线衍射(XRD)分析,比较了有、无 Cu_xTe 插层的 CdTe 太阳电池的暗态 I-V 特性和 C-V 特性。结果表明,刚沉积的薄膜非晶结构占主导地位,只有部分 Cu/Te 配比较低的薄膜出现多晶结构。Cu_xTe 插层的引入有利于消除 roll over (暗态 I-V 曲线饱和)现象,使电池的二极管理想因子和暗饱和电流密度降低,CdTe 掺杂浓度增加,有效地改善了CdTe 太阳电池的性能。用 Cu_xTe 薄膜作为背接触层,获得了效率为12.5%的 CdS/CdTe小面积(0.0707cm^2)太阳电池。
CuxTe thin films were prepared by the vacuum co-evaporation technique and they were applied to CdTe solar cells. The XRD method was used for study of the structure of the films, and the I - V and C - V characteristics of the devices with or without CuxTe layers were compared. The results show that polycrystalline structure appears in the films with low Cu/Te ratio and non-crystalline structure is gradually becoming the dominant phase for the films with the increase of Cu/ Te ratio. Phase transformations occur after annealing. After introducing CuxTe layer in CdTe solar cells, the roll over phenomenon was eliminated. In addition, a lower diode ideal factor, a saturated dark current density and a higher cartier concentration were achieved. With CuxTe thin films as the back contact layer, a conversion efficiency of 12.5 % was ob- tained for CdS/CdTe solar cells with a small area of 0.0707cm^2.
出处
《高技术通讯》
EI
CAS
CSCD
北大核心
2008年第8期842-845,共4页
Chinese High Technology Letters
基金
863计划(2003AA513010)
教育部博士点基金(20050610024)
四川省应用基础项目(2006J13-083)资助
