摘要
采用磁控溅射法低功率在玻璃衬底上制备低功率(LP)过渡层,再在其上高功率生长ZnO薄膜,研究了LP过渡层对薄膜结构性能的影响。XRD和SEM结果表明,引入LP过渡层后,高射频(RF)功率溅射的ZnO薄膜(002)定向性显著改善。随溅射功率的提高,薄膜(002)定向性有所下降,但致密性明显好转。与无过渡层薄膜相比,在溅射功率分别为30 W和50 W过渡层上生长的薄膜晶粒变大。研究表明,在30 W的LP过渡层上用200 W功率制备的薄膜性能最佳。
The effects of low-power （LP） buffers on the structural properties of ZnO thin films deposited under high power by RF magnetron sputtering have been investigated. The X-ray diffraction and scanning electron microscopy results indicate that, after inserting a LP-buffer, the c-orientatlon of the ZnO films deposited under high RF power is considerably improved and the grains become larger in comparison with that of the film without LP-buffer. With the increase of the RF power, the densification of the films improves with the slight decrease of the c-orientation. The high-quality ZnO film can be obtained on 30 W LP-buffer/glass substrate deposited under RF power of 200 W.
出处
《压电与声光》
CSCD
北大核心
2008年第2期221-223,共3页
Piezoelectrics & Acoustooptics
基金
上海市科委科研计划基金资助项目(0652nm047)
上海市重点科学基金资助项目(T0101)
