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聚酰亚胺为栅绝缘层的并五苯场效应晶体管 被引量：3

Pentacene organic field-effect transistors with polyimide gate dielectric layer
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摘要 以真空蒸发的有机半导体材料并五苯为有源层,以旋涂的聚酰亚胺作为栅绝缘层,以真空蒸发的Al为栅、源和漏电极,成功制作了顶接触式并五苯有机场效应晶体管(OFET)。测试表明,在源漏电压为70V时,器件的载流子迁移率μ为0.079cm2/V.s,器件的开关电流比为1.7×104. An organic field-effect transistor is achieved by the vacuum evaporation of pentacene as the active layer, the spin coating of polyimide as insulator layer,and the vacuum evaporation of aluminim as gate,source and drain electrodes respectively. The field-effect mobility of 0. 079 cm^2/V · s was tested at Vds equaling 70 V,and the on/off radio is up to 1.7× 10^4.
作者 董茂军 陶春兰 张旭辉 欧谷平 张福甲
机构地区 兰州大学物理科学与技术学院
出处 《光电子．激光》 EI CAS CSCD 北大核心 2008年第2期161-163,共3页 Journal of Optoelectronics·Laser
基金 国家自然科学基金资助项目(60676033)
关键词 有机场效应晶体管(OFET) 并五苯 迁移率 聚酰亚胺 organic field-effect transistors（OFET） pentacene field-effect mobility, polyimide
分类号 TN321 [电子电信—物理电子学]
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参考文献14

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共引文献8

同被引文献19

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引证文献3

二级引证文献2

光电子．激光
2008年 第2期

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