期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

高k纳米MOSFET的关态泄漏电流的研究 被引量：1

Research on Off-State Leakage Current in Nano-Scale MOSFET with High-k Gate Dielectrics
在线阅读 下载PDF
导出
摘要 对纳米MOSFET关断态的栅电流、漏电流和衬底电流进行了模拟,指出边缘直接隧穿电流(IEDT)远远大于传统的栅诱导泄漏电流(IGIDL)、亚阈区泄漏电流(ISUB)及带间隧穿电流(IBTBT)。对50 nm和90 nm MOSFET器件的Id-Vg特性进行了比较,发现在高Vdd下,关态泄漏电流(Ioff)随IEDT的增加而不断增大,并且器件尺寸越小,Ioff越大。高k栅介质能够减小IEDT,进而减小了Ioff,其中HfSiON、HfLaO可以使边缘隧穿电流减小2～5个数量级且边缘诱导的势垒降低(FIBL)效应很小。但当栅介质的k>25以后,由于FIBL效应,关态泄漏电流反而增大。 Simulation of the off-state gate current, drain current and substrate current in nano-scale MOSFET indicated that the edge direct tunneling current （IEDT） was far larger than conventional gate induced drain leakage current （IGDU） , subthreshold leakage current （ISUB） , and band-to-band tunneling current （IBTBT） , thus becoming the dominating off-state leakage current. An comparison of Ia- Vg characteristics for 50 nm and 90 nm MOSFET observed that the off-state leakage current increased greatly with the edge direct tunneling current at high Vad , and the smaller the device is in size, the larger is the Ioff induced by the edge direct tunneling. An comparison of the IEDT＇ S in various gate dielectrics including SiO2, Si3N4 and HfO2 showed that Ioff can be decreased by using high-k gate dielectrics to reduce IEDT, but an investigation of Id-Vg characteristics for various gate dielectrics revealed that the increase in Ioff was due to the edge induced barrier-lowing effect, when k〉25. HfLaO and HfSiON can reduce IEDT by 2-5 orders of magnitude, with small FIBL.
作者 杨建红 李桂芳 刘辉兰
机构地区 兰州大学物理科学与技术学院微电子研究所
出处 《微纳电子技术》 CAS 2007年第12期1043-1047,共5页 Micronanoelectronic Technology
基金 中国博士后基金资助项目(G2000068306) 辽宁省教育厅资助项目(90201038)
关键词 关态泄漏电流 边缘直接隧穿电流 边缘诱导的势垒降低 高K栅介质 off-state leakage current edge direct tunneling current fringing induced barrier lowering （FIBL） high-k gate dielectrics
分类号 TN386.1 [电子电信—物理电子学]
  • 相关文献

参考文献19

  • 1LIN Y S, WU C C , CHANG C S , et al. Leakage scaling in deep submicron CMOS for SoC [J] . IEEE Trans on Electron Devices, 2002, 49 (6) : 1034-1041.
  • 2HENSON W K, YANG N , KUBICEK S, et al. Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm region [J] . IEEE Trans on Electron Devices, 2000, 47 (7) : 1393-1400.
  • 3MA S G, ZHANG Y H, LI M F, et al. Gate induced drain leakage current enhanced by plasma charging damage [J] . IEEE Trans on Electron Devices, 2001, 46 (5) : 1006-1008.
  • 4MA Z J, LAI P CHENG Y C et al. Off-state instability in thermally nitrided-oxide n-MOSFETs [J] . IEEE Trans on Electron Devices, 1993, 40 (1) : 125-130.
  • 5YANG N, HENSON W K, WORTMAN J J. A comparative study of gate direct tunneling current and drain leakage currents in NMOSFETs with sub-2nm gate oxides [J]. IEEE Trans on Electron Devices, 2000, 47 (8) : 1636-1644.
  • 6MAITRA K, BHAT N, Polyreoxidation process step for suppressing edge direct tunneling through untrathin gate oxides in NMOSFETs [J] . Solid-State Electronics, 2003, 47 (1) : 15-17.
  • 7TSUI B Y, CHIN L F. A comprehensive study on the FIBL of nanoscale MOSFET [J] . IEEE Trans on Electron Devices, 2004, 51 (10) : 1733-1735.
  • 8TAN Y P, JAMES MKL, ZHANG Q, et al. Simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics [ C] // IEEE Electron Devices and Solid-State Circuits. 2005:111-113.
  • 9LIU X, LOU S, XIA Z, et al. Characteristics of different structure sub-100 nm MOSFETs with high-k gate dielectrics [C] //SolidState and Integrated-Circuit Technology. Proceedings 6th International Conference on, Shanghai, China, 2001: 333-336.
  • 10OATES A S. Reliability issues for high-k gate dielectrics [C] // Teeh Dig Int Electron Devices Meeting. 2003: 38.2.1-38.2.4.

同被引文献6

  • 1Xu J P,Lai P T,Cheng C Y.1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses[J].journal of applied physics 1999,86:91-95.
  • 2RalfBrederlow,WernerWeber,Doris.Schmitt-Landsiedeand roland Thewes.Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions[J].ieee transactions on electron devices,2002,49(9):234-237.
  • 3Anil kottantharayil.low voltage hot carrier issue in deep sub micron metal oxide semiconductor field effect transistors[C].tag der priifung,2001,22.
  • 4Manish P Pagey.hot carrier reliability simulation in aggressively scaled MOS transistor.Dissertation Submitted to the Faculty of the Graduate School of Vanderbilt University in partial fulfillment of the requirements for the degree of doctor of Philosophy in Electrical Engineering December[C].Nashville,Tennessee,2003.
  • 5Francesco Giazotto,Tero T Heikkil(a),Arttu Luukanen,et al.Opportunities for mesoscopics in thermometry and refrigeration[J].Reviews of Modern Physics,2006,78:217-221.
  • 6程玉华,李瑞伟,李志坚.漏雪崩应力下热载流子注入引起的MOSFET退变特性研究[J].Journal of Semiconductors,1993,14(12):723-727. 被引量：1

引证文献1

微纳电子技术
2007年 第12期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部