摘要
为实现硅压力传感器的快速评价和快速提高传感器可靠性的目标,综合分析了国际上先进的可靠性强化试验理论与技术,并应用失效物理学原理,对硅压力传感器可靠性强化试验技术剖面进行了研究性评述。
In order to realize quick evaluating and improving for the reliability of Si pressure sensor, the international advanced enhancing experimental theories and technologies were analyzed, the enhancing experimental measurement technologies of pressure sensors was investigated by the theory of failure physics.
出处
《微纳电子技术》
CAS
2007年第7期288-290,共3页
Micronanoelectronic Technology
