摘要
VO2在68℃附近发生从高温金属相到低温半导体相的突变,且相变可逆。由于相变前后其电、磁、光性能有较大的变化,使得它在光电开关材料、存储介质、气敏传感器和智能玻璃等方面有着广泛的应用。然而由于VO2稳定存在的组分范围狭窄,使得制备高纯度VO2薄膜较为困难。为此人们做了很多工作来研究VO2薄膜的制备。本文综述了2000年以来VO2薄膜制备方法的研究情况,比较了各种制备方法对薄膜性能的影响,介绍了VO2薄膜研究的最新研究进展,并为扩大其应用领域而探讨了今后的研究方向。
Vanadium dioxide （ VO2 ） single crystals undergo a first order transition from semiconductor to metallic state at approximately 68℃. Associated with the phase transition are the considerable changes in its electrical, magnetic and light characteristics, it can be widely used in thermal, electrical switching elements, optical storage media devices and sensitive sensor and solar energy control of windows. The film of VO2 stably exists in a narrow range of composition, and it is difficult to get pure VO2. Much work has been done to investigate the film of VO2. This paper summarizes the recent progress of the preparation method of VO2 thin film since 2000 and the influence of various preparation methods upon the properties of the thin film are compared. To expand its application, the newest development of the VO2 thin film is introduced, and its future research is also discussed.
出处
《化工进展》
EI
CAS
CSCD
北大核心
2007年第6期814-818,共5页
Chemical Industry and Engineering Progress
关键词
二氧化钒
相变
薄膜制备
VO2
phase transition： film preparation
