摘要
Based on a short anode GTO structure （SA-GTO）,a novel GTO structure called an injection efficiency controlled gate turn off thyristor （IEC-GTO） is proposed,in which the injection efficiency can be controlled via an additional thin oxide layer located in the short anode contact region. The forward blocking, conducting, and switching characteristics are analyzed and compared with an SA-GTO and conventional GTO. The results show that the IEC-GTO can obtain a better trade-off relation between on-state and turn-off characteristics. Additionally,the width of the oxide layer covering the anode region and the doping concentration of the anode region are optimized, the process feasibility is analyzed, and a realization scheme is given. The results show that the introduction of an oxide layer would not increase the complexity of process of the IEC-GTO.
在阳极短路型门极可关断晶闸管(SA-GTO)的基础上,提出了一种新颖的注入效率可控的门极可关断晶闸管(IEC-GTO),其注入效率可通过一层位于阳极短路接触区的薄氧化层来控制.模拟了IEC-GTO的正向阻断、导通和开关特性,并与短路阳极和普通阳极GTO的特性进行比较分析.结果表明,IEC-GTO在关断特性和通态特性间获得较好的折中.最后,通过对薄阳极氧化层宽度和阳极掺杂浓度的优化,分析了工艺的可行性,给出了工艺方案,说明引入氧化层并不会增加IEC-GTO的工艺难度.
基金
西安理工大学优秀博士生科研基金
科研计划资助项目~~
