摘要
改进了传统稳态加热法的测试结构,设计了带隔离槽的全对称悬空薄膜测试结构,并使用有限元工具对测试结构进行了优化.测量了室温下50和80nm厚度的单晶硅薄膜的横向热导率,分别为32和38W/(m.K),其相对体硅热导率(148W/(m.K))有明显下降,实验结果与BTE(Boltzmann transport equation)的理论预测曲线吻合得很好.
The traditional steady-state joule heating method is improved by inducing a symmetric structure,and a thermal isolation trench is added in suspended Si membrane. The novel measurement structure is optimized using ANSYS tools. A large reduction in thermal conductivity resulting from phonon boundary scattering is observed. The lateral thermal conductivity of the 50nm and 80nm Si films at a temperature of 293K are measured to 32 and 38W/（m · K）, respectively, which, compared to the bulk value of 148W/（m · K）,agree well with the prediction of the BTE equation.
基金
国家重点基础研究发展规划资助项目(批准号:G2000036501)~~
关键词
超薄单晶硅薄膜
热导率
稳态加热法
ultra-thin single crystal layer
thermal conductivity
steady-state joule heating
