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计算机硬盘基板及其CMP技术分析研究 被引量:6

Study of Computer Hard Disk Substrate and Its CMP
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摘要 随着计算机硬盘容量的增大、转速的提高、磁头与盘片间距离的降低,对硬盘基板材料选择及改善基板表面平整度提出了更高的要求。综述了硬盘基板材料的发展状况,指出了基板化学机械抛光(CMP)中亟待解决的问题和解决的途径,分析研究了影响硬盘基板CMP技术的因素及如何控制基板抛光后的表面质量。 With the increasing capacity of hard disk of computer, the rotational increasing speed, the distance between the magnetic head and substrate lower, higher requirements were set for chips of hard disk to choose materials and increase the formation of surface. An overview of development about chips material for hard disk was provided, the questions which were solved urgently in the CMP process of chips were pointed out. The influencing factors of chips CMP technology on hard disk were analyzed, and the method for controlling the finishing surface of substrate after CMP was researched.
出处 《半导体技术》 CAS CSCD 北大核心 2006年第8期565-568,共4页 Semiconductor Technology
基金 天津市自然科学基金科技发展计划项目(043801211)
关键词 硬盘 化学机械抛光 平整度 hard disk CMP smoothness
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参考文献20

  • 1DARNEL E D. MEE C D, CLARK M H.Magnetic Recording: The First 100 Years[M]. New York:IEEE Press,1998.
  • 2TSAI H C. Advantage and challenge of nonmetallic substrates for rigid disk applications[J]. IEEE Trans on Magn,1993,29(1):241-245.
  • 3郑伟宏,程金树,谢俊,汤李缨,楼贤春.计算机硬盘基板材料的研究与发展[J].玻璃,2003,30(6):12-15. 被引量:6
  • 4POON C Y, BHUSHAN B. Surface roughness analysis of glass-ceramic substrates and finished magnetic disks, and Ni-P coated Al-Mg and Glass substrates[J].Wear, 1995,190(1):89- 109.
  • 5XIONG W. Cr-Ta2O5 seedlayer for recording media on alternative substrates[J].IEEE Trans on Magnetics, 1998,34(4):1570- 1572.
  • 6HWANG S P. Effect of composition on microstructural development in MgO-Al2O3-SiO2 glass-ceramics[J].J of the American Ceramic Society,2001,84(5): 1108- 1112.
  • 7NAOYULD G, KATSAHIKO Y. Galss-ceramic for Magnetic Disk Substrates[P]. Jap Patten:08111024.1996-4.
  • 8DAVARI B, KOBURGER C W, SCHULZ R, et al. A new planarization technique using a combination of RIE and chemical mechanical polish(CMP) [C]//IEEE IEDM. San Francisco, CA,1989:61 - 64.
  • 9STEIGERMALD J M, MURARKA S P, GUTMANN R J. Chemical Mechanical Planarization of Microelectronic Materials[M]. John Wiley & sons, Inc,NewYork,USA, 1996:117- 324.
  • 10KAUFMAN F B,THOMPSON D B, BROABIE R E, et al. Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects [J]. J Electrochemsoc, 1991,138(11):3460-3464.

二级参考文献49

  • 1Shah V K. Development of a new generation polyurethane polishing pad used in chemical mechanical planarization of microelectronic materials[D]. MS thesis, University of Massachusetts Lowell, USA. 2002
  • 2Lu H, Obeng Y, et al. Applicability of dynamic mechanical analysis for CMP polyurethane pad studies[J]. Materials Characterization, 2003,49: 177~186
  • 3Lu H, Fookes B, Obeng Y, et al. Quantitative analysis of physical and chemical changes in CMP polyurethane pad surfaces[J]. Materials Characterization, 2002,49: 35~44
  • 4Stavreva Z, Zeidler D, et al. Characteristics in chemical mechanical polishing of copper: comparison of polishing pads[J]. Applied Surface Science, 1997,108:39~44
  • 5Hooper B J, Byrne G, et al. Pad conditioning in chemical mechanical polishing[J]. Journal of Materials Processing Technology, 2002,123: 107~113
  • 6Xie Y S, Bhushan B. Effects of particle size, polishing pad and contact pressure in free abrasive polishing[J]. Wear, 1996,200: 281~295
  • 7Choi J. Evaluation of the effect of pad thickness and stiffness on pressure non-uniformity at die-scale in ILD CMP. http://repositories.cdlib.org/lma/pmg/jihong-1-03
  • 8Tregub A, Moinpour, M. Sorooshian J.Effect of groove orientation on thermal and mechanical properties of CMP polishing. http: // www.appliedmaterials.com / products / cmp-tech-papers.html
  • 9Lee D H, Kwon D J, et al. A 3D numerical study of the polishing behavior during an oxide chemical mechanical planarization process[J]. Key Engineering Materials, 2004,257~258, 433~440
  • 10Huey S, Mear S T, Wang Y C, et al. Technological breakthrough in pad life improvement and its impact on CMP CoC[C]. Proceedings of IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 1999,54~58

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