摘要
介绍了单晶硅压力传感器温度漂移的机理，阐述了采取串并联电阻网络和有源电路分段等综合补偿方法的补偿原理。实验结果表明：在－45～85℃温区内，补偿后，热零点漂移和热灵敏度漂移从±0．5％FS／℃提高到±0．014％FS／℃。
Temperature drift principle of mono crystal silicon pressure sensor is introduced,the principle and the detail compensation method of the series-parallel connection resistance net and impassive subsection synthesize way is described. The results of the experiment show that in the temperature range of -45- 85℃, the temperature drift of off set of the sensor and the temperature drift of sensitivity of sensor is improved from ± 0.5 % FS/℃ to ±0.014 % FS/℃.
出处
《传感器与微系统》
CSCD
北大核心
2006年第7期33-35,39,共4页
Transducer and Microsystem Technologies
关键词
传感器
热零点漂移
热灵敏度漂移
补偿
sensor
temperature drift of the off set
sensitivity temperature drift
compensation
