摘要
用直流反应磁控溅射法在陶瓷基片上制备出TiO2薄膜。并进行1 100℃,2 h的退火处理。配置钼酸铵溶液,利用浸渍法处理TiO2薄膜若干时间。取出后,进行500℃,3 h退火处理。用气敏测试箱对制备出的TiO2薄膜的氧敏特性进行试验测试,发现对氧气有很好的敏感特性,比未经此项工艺处理的TiO2薄膜的最佳工作温度降低100℃,为300℃左右,并进行SEM测试,分析其表面结构,研究气敏机理。
TiO2 thin films are preparated on alumina substrates by the method of DC reactive magnetron sputtering. Annealing is carried out at 1 100℃ for 2 h. Put them into the ammonium molybdate solution and then annealed at 500℃ for 3 h. The thin films have better oxygn-sensing properties. The best operating temperature droped 100℃ than undoped TiO2 thin films, it＇s about 300℃. The SEM testing is carried out, the surface structure of the thin films is analysed ,and the mechanism of the thin films oxygen-sensing properties is investigated.
出处
《传感器与微系统》
CSCD
北大核心
2006年第7期15-17,共3页
Transducer and Microsystem Technologies
关键词
TIO2薄膜
钼酸铵
最佳工作温度
氧敏特性
TiO2 thin films
ammonium molybdate
best operating temperature
oxygen-sensing properties
