摘要
对不同掺杂的BaTiO3基陶瓷的电性能、界面形态、氧元素分布特点以及电畴结构等进行研究发现:瓷体半导化速度很快,烧成温度是影响瓷体半导化速度的最重要因素;氧在晶粒晶界的偏析,并且对势垒的形成有重要作用;样品掺杂的元素不同,电畴结构会发生一定变化,畴结构和电阻起跳性存在一定关系.
The electrical property, interface morphology, the distribution of oxygen and domain of ceramic materials with different donor doped were studied in this paper and the results indicated that ceramic semiconducting were very fast and the most important factor to affect ceramic semiconducting career was sinting temperature;oxygen was segregated in crystal boundary and this was important to form barrier;domain structure varied when different elements were adulterated ; domain and the resistance jumping property were related.
出处
《河北师范大学学报（自然科学版）》
CAS
北大核心
2006年第4期419-422,共4页
Journal of Hebei Normal University：Natural Science
基金
国家自然科学基金资助项目(50444019)
河北省自然科学基金资助项目(E2005000433)
