摘要
在ＨｇＣｄＴｅ晶体表面上用电化学方法得到了Ｃｄ和Ｔｅ的共沉积．所用的电解质由Ｈ２ＳＯ４；ＣｄＳＯ４和ＴｅＯ２的水溶液所组成．稳态沉积电流密度随着沉积电位更负，电解质温度升高和ＴｅＯ２浓度的增加而增大．Ｘ光衍射分析证实，当沉积电位比－０．７０Ｖ（ｖｓＳＣＥ）更负时，沉积膜由ＣｄＴｅ和Ｃｄ所组成．当沉积电位比－０．６７５Ｖ更正时，沉积膜为化学计量的多晶ＣｄＴｅ，其（１１１）面为优先生长的晶面族．沉积膜的显微照相可能表明多层ＣｄＴｅ的扁平晶粒逐步长大连成一体后而完全复盖底晶．俄歇电子谱的深度剖面分析显示在所沉积的条件下，底晶中的Ｈｇ向ＣｄＴｅ沉积膜内有较深的扩散．
Cd and Te codeposition was performed by means of electrochemical technique on HgCdTe crystal. An aqueous electrolyte containing CdSO4 and TeO2 with PH=2￣2.5 was used. The deposition current density was increased as the cathodic potential became more negative, and TeOZ concentration and the temperature of the electrolyte were enhanced. It was identified by X-ray diffraction analysis that the deposition film consists of CdTe and Cd when the cathodic potential is more negative than -0.70V(vs SCE). However, it consists only of stoichiometric polycrystalline CdTe when the deposition potential is more positive than -0.675V (vs SCE). The CdTe (111) is the preferencially grown crystal face group. The microphoto of the deposition film revealed that the substrate HgCdTe crystal is covered by multilayers of flat grains which are growing continuously. Auger depth profile of CdTe film showed that Cd and Te have a homogeneous distribution along the depth. However it was observed that Hg from the substrate HgCdTecrystal diffuses into the film to a wide distance.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第1期131-136,共6页
Journal of Inorganic Materials
