摘要
采用一种新工艺制作了垂直腔面发射激光器（VCSEL），即用开环分布孔取代以往的环形沟道作为氧化物限制技术的注入窗口。因开环分布孔间形成多个桥，为电注入提供了天然的桥状通道，解决了电极过沟断线问题。这种新结构器件的输出功率约为以往结构器件的1．34倍。在20℃～80℃范围内，对器件的输出功率、阈值电流及波长漂移性进行了研究。60℃时最大输出光功率可达到6mW。激射波长随温度升高呈线性变化，且向长波方向移动，速率为0．06nm／℃。由实验结果计算出器件的热阻为1．96℃／mw。
A new process method, using open annulus distributed holes in place of ring trench as the lateral oxidation windows, is reported to fabricate vertical-cavity surface emitting laser （VCSEL）. Because open annulus distributed holes offer bridges for current injection, the connecting Ti Au metal between ohmic contact and bonding pad does not have to cross the ring trench and would not break. The VCSELs with open annulus distributed holes have a light output power of 1.34 times higher than those with ring trench. Characteristics of VCSELs with such geometry mesa have been investigated in detail taking into account output power, threshold current and wavelength shift at temperatures ranging from 20℃ to 80 ℃. The VCSELs have a maximum output power of 6 mW even by increasing the operation temperature up to 60 ℃. Wavelength shifts linearly by 0. 06 nm/℃ toward to longer wavelength with increasing temperature. The calculated thermal resistance is 1.96 ℃/mW.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2006年第4期443-446,共4页
Chinese Journal of Lasers
基金
国家自然科学基金(60306004)资助项目
关键词
激光技术
垂直腔面发射激光器
开环分布孔
氧化物限制技术
量子阱
半导体激光器
laser technique
vertical-cavity surface emitting laser
open annulus distributed holes
oxide-confined process
quantum well
semiconductor laser
