摘要
通过分析实际P-N结与理想模型之间的差别,建立了P-N结二极管及太阳能电池的数学模型;利用Matlab中的系统仿真模块库建立仿真模型,设置参量,求解模型方程并绘制了图形.对太阳能电池在一定光照下旁路电阻及串联电阻取不同数值时对其开路电压、短路电流及填充因子的影响做了模拟,并与实际测得的硅太阳能电池伏安特性进行了比较.模型分析与实验测量的结果表明等效的旁路电阻和串联电阻分别影响电池的开路电压和短路电流.仿真结果与实验测量结果一致.
With the establishing of a mathematical model of P-N junction, the difference between a practical P-N junction and its ideal model was analyzed. The volt-ampere properties of diodes and solar cells were simulated through the model. The influence of series and shunt to open-circuit voltage and short-circuit current of solar cells under certain illumination were demonstrated. With a simple Matlab,the equivalent circuit of a solar cell was numerically analyzed and solved last,I-V properties of a Si solar cell were measured and compared to the I-V curve t model established by hough a equation. At lculated by our model whose parameters were setting properly. The results show that the model established in this paper is consistent with the practical devices.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2006年第2期171-175,共5页
Acta Photonica Sinica
基金
西北大学人才引进资金项目(04XD0114)
研究生创业种子基金(Z200579)资助
