摘要
取样光栅DBR(SGDBR)激光器是目前光通讯中最有应用前景的可调谐激光器之一。利用传输矩阵法模拟了取样光栅DBR半导体激光器的光谱特性。计算中,把取样光栅DBR半导体激光器的增益区、位相区和取样光栅DBR看成基本单元。而每一个基本单元都可以看作一个普通的双端口器件。其传输特性用一个2×2复矩阵表示。在阈值以下,对于有源区和取样光栅DBR的不同注入电流,发射光谱显示不同的输出特征。当有源区的注入电流为9.5 mA时,主模开始在1.553μm附近形成。当取样光栅DBR有注入电流时,主模形成的位置发生了变化,表现出可调谐的性质。同时,明显出现主模的有源区的注入电流发生变化。这种方法也反映了激光器的阈值条件。阈值电流为10 mA。
Sampled grating DBR （SGDBR） lasers are the most promising one of the tunable lasers applied in optical communications.The spectral characteristics of sampled grating DBR semiconductor lasers was modeled using transfer matrix method.Gain region, phase region and sampled grating DBR are regarded as elementary parts in calculation.Every elementary part is regarded as a two-port device whose transmission property is expressed by a 2x2 complex matrix.Below threshold, emission spectra show different output characteristics under different injection currents into gain region and SGDBR.When the current injected in the active region is 9.5 mA,a main mode begins to arise near 1.553 μm. When there are currents in a sampled grating DBR, the positions at which main modes begin to arise vary,which shows tunability.Meanwhile the current injected in the active region also varies when a main mode begins to arise.Threshold condition is also reflected using this method.Threshold current is 10 mA.
出处
《红外与激光工程》
EI
CSCD
北大核心
2005年第4期415-420,共6页
Infrared and Laser Engineering
基金
武汉市科技攻关计划项目(20021005130-01)
