摘要
通过Ｘ光衍射图分析，确认了较低温度下ＣＶＤ法生长的非掺杂ＳｎＯ２晶膜含有较多的偏离ＳｎＯ２配位的晶体成份，从而定性地解释了该晶膜具有较高的气体敏感度的现象。
Through analysing X-ray diffraction patterns, it is confirmed that more crystal compositions deviating from SnO2 coordination are contained in undoped SnO2 film CVD-grown at lower temperature. So it is explained that this film has higher gas sensitivity.
出处
《固体电子学研究与进展》
CSCD
北大核心
1995年第2期185-189,共5页
Research & Progress of SSE
基金
国家与福建省自然科学基金
