摘要
常规双极晶体管在７７Ｋ下电流增益和频率性能都严重退化。本文首先分析了低温双极晶体管基区Ｇｕｍｍｅｌ数，基区方块电阻，渡越时间和穿通电压等参数与温度及基区掺杂的关系，然后讨论了低温双极器件基区的优化设计问题。
The conventional silicon bipolar transistors designed for room temperature operation suffer serious degradation in current gain and frequency performance at 77 K. In this paper,the temperature dependence and variation of parameters,including the base Gummel number,the base sheet resistance,the base transit time and the pushthrough voltage,versus temperature and the base doping profile are analyzed. Then the optimization of base design of silicon bipolar transistors for low temperature operation is discussed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第3期260-266,共7页
Research & Progress of SSE
基金
国家自然科学基金
关键词
双极晶体管
基区
低温
硅晶体管
Bipolar Transistor,Base, Low Temperature, Transit Time,Doping Profile
