摘要
IC器件尺寸的纳米化,要求高的光刻曝光分辨率,在采用短波长和大数值孔径曝光系统提高分辨率的同时导致了焦深变浅,进而对晶片表面的平坦化要求越来越高。在比较了IC工艺中的四种平坦化技术基础上,重点综述了唯一可以实现全局平坦化的化学机械抛光(CMP)方法的发展、应用及展望。
With feature size of IC devices shrinking to nano-scale,high lithography resolution was required,which is achieved by shorter wavelength and bigger numerical aperture.But the above methods simultaneously result in shallower depth of focus,which make high planarity for wafer be necessary in order to achieve accurate lithography and pattern shift.After four kinds of planar methods are compared,as unique global planarization method,the development,application and prospects of chemical mechanical polishing are reviewed.
出处
《微纳电子技术》
CAS
2005年第7期336-339,共4页
Micronanoelectronic Technology
基金
国家863计划基金项目资助(2003AA302720
2004AA302G20)
上海市纳米科技与产业发展促进中心纳米专项基金项目资助(0352nm016
0452nm012)
关键词
超大规模集成电路
化学机械抛光
纳米
抛光液
全局平坦化
ULSI
chemical mechanical polishing(CMP)
nanometer
polishing slurry
global planarization
