摘要
提出了热丝化学气相淀积法，在低温（６００－７５０℃）下成功地生长出硅上单晶碳化硅薄膜，Ｘ光衍射谱、喇曼光谱证实了外延膜的单晶结构，光致发光测量证明外延ＳｉＣ材料室温下可稳定发射可见光。
A new SiC film growth method- hot-filament chemical vapor deposition(HFCVD) has beendeveloped,which is successfully used to grow single crystal SiC films on Si substrates at low temperature(600-750℃). The results of X-ray diffraction analysis and Raman scattering spectroscopy indicated theexistence of a monocrystalline structure of the epilayer.Visible light emitting was observed inphotoluminescence experiments at room temperature.
出处
《高技术通讯》
CAS
CSCD
1994年第11期10-13,共4页
Chinese High Technology Letters
基金
国家教委跨世纪人才专项基金
国家自然科学基金
关键词
热丝法
低温生长
碳化硅
单晶
Hot filament method,Low temperature growth,Silicon carbide,Single crystal,Thinfilm
