摘要
本文在导出MOSFET全工作域表面态噪声谱密度通用表示式的基础上,进一步推得MOSFET 1/f噪声谱密度的实用公式,适用于强、弱反型从线性区直到饱和区的各种工作状态。理论很好地符合噪声谱频率因子实验、偏置电压实验及器件尺寸实验。研究表明,本文提出的理论公式具有实际应用的价值,可望作为描述表面态噪声特性的基础公式。
The spectrum model of surface state noise of MOSFET's, operating in weak and strong inversion from the linear to the saturation region, is developped. From the model, a simple analytical 1/f noise expression is obtained. The given expression is used to analyse the frequency dependance of the noise spectrum, and the influence of bias and geometry on the noise. The theory agrees well the experimental results. It is shown that the new expressions have the advantage of good practicability.
出处
《武汉大学学报（自然科学版）》
CSCD
1989年第2期39-48,共10页
Journal of Wuhan University(Natural Science Edition)
基金
国家自然科学基金
关键词
MOSFET
表面态噪声
Yf噪声
surface state noise
1/f noise
noise spectrum frequency dependance
