摘要
对静电感应晶体管(SIT)的小电流工作区,从电势方程出发,利用设定的边界条件,导出了二维势函数的近似解析表达式,并以此为据对SIT的作用机制进行了系列分析,进而对SIT的中、大电流工作区及特大电流工作区进行了讨论.指出大电流时,SIT的电流-电压特性与空间电荷限制效应密切相关.
An analytical model of SIT based on an explicit approximate solution of 2-D Poisson's equation provides an analytical description of its 1-V characteristic over the full range of normally en-counted biasing condition. The high-current analysis reveals that the unsaturated I-V characteristic is correlated closely to the space-charge limited effect.
出处
《电力电子技术》
CSCD
北大核心
1994年第2期34-38,共5页
Power Electronics
