摘要
A new approach,gate-capacitance-shift (GCS) approach,is described for compact modeling.This approach is piecewise for various physical effects and comprises the gate-bias-dependent nature of corrections in the nanoscale regime.Additionally,an approximate-analytical solution to the quantum mechanical (QM) effects in polysilicon (poly)-gates is obtained based on the density gradient model.It is then combined with the GCS approach to develop a compact model for these effects.The model results tally well with numerical simulation.Both the model results and simulation results indicate that the QM effects in poly-gates of nanoscale MOSFETs are non-negligible and have an opposite influence on the device characteristics as the poly-depletion (PD) effects do.
提出了一种新的建立集约模型的方法 ,即栅电容修正法 .此方法考虑了新型效应对栅电压的依赖关系 ,且可以对各种效应相对独立地建模并分别嵌入模型中 .另外 ,利用该方法和密度梯度模型建立了一个多晶区内量子效应的集约模型 .该模型与数值模拟结果吻合 .模型结果和模拟结果均表明 ,多晶区内的量子效应不可忽略 ,且它对器件特性的影响与多晶耗尽效应相反 .
基金
国家高技术研究发展计划资助项目 (批准号 :2 0 0 3 AA1Z13 70 )~~
