摘要
在研制压力传感器时,采用静电-热键合相结合的方法,对Si/Au-Class、Si/Au-Glass/Si结构的键合技术进行了研究.硅与淀积有金加热器引线玻璃的封接:先以Si/Glass静电键合方法进行,再400℃退火2h,使Si/Au热键合.用一次充氮真空检漏法对键合形成的绝压腔进行了测试,结果显示:键合界面接合牢固、气密.此技术被用于Si/Au—Glass/Si结构自检测压力传感器的键合封接,经对传感器测试,性能良好,具有自检测功能.
Electrostatic-alloy bonding of silicon wafer bonding with glass deposited by Au(Si/Au-Glass) and the Si/Au-Glass with silicon wafer were researched during fabricating the pressure sensors. The silicon wafer and glass wafer with Au film resistor were bonded by electrostatic bonding, and then silicon-Au alloy bonding was formed by 400°C annealing for two hours. The air sealability of the cavity after bonding was finally tested by the method of N2 filling. The results indicated that large bond strength was obtained at the bonding interface. This process was used in fabricating pressure sensor with sandwich structure. The results indicated that the sensor presented good performances.
出处
《哈尔滨工业大学学报》
EI
CAS
CSCD
北大核心
2005年第1期134-136,共3页
Journal of Harbin Institute of Technology
基金
国家高技术研究发展计划资助项目(2003AA404014).
关键词
键合
静电-热键合
压力传感器
MEMS
Annealing
Bond strength (chemical)
Electrostatics
Filling
Gold
Metallic films
Microelectromechanical devices
Nitrogen compounds
Pressure transducers
Silicon wafers
