摘要
研究了采用B2O3作为掺杂源以EACVD法沉积大面积掺杂VCD金刚石膜,用SEM、Raman、二次离子质谱仪、四探针电阻仪等对B掺杂金刚石膜进行了分析。结果表明直径达100mm的大面积B掺杂金刚石膜的晶粒分布均匀,非金刚石碳含量较少,生长速率达到10μm／h以上;B掺杂改变了金刚石膜的成分和结构,高浓度掺杂可以细化晶粒,在高浓度掺杂的膜中存在一定的非晶态碳;金刚石膜中B的含量在一定范围内随着掺杂源浓度的增加而正比增加;金刚石膜的电阻率随着掺杂源B2O3的浓度的增加而下降,当掺杂达到一定浓度时,金刚石膜的电阻率逐渐趋向稳定。
B-doped large area CVD diamond thick films were deposited by means of electro assistant hot filament chemical vapor deposition (EACVD) through adding B2O3 into C2H5OH during the deposition process. The samples of diamond films with different B/C ratios were investigated by scanning electron micrograph (SEM) and Raman scattering spectroscopy (Raman). The ratio of different levels of B dopant in the diamond film was tested by secondary ion mass spectrometry (SIMS). The resistivity of the diamond film was studied by the means of four-probe method. The experimental results show that the diamond film, a diameter of 100 mm and a deposition speed of 10 μm/h, has good micro-structure and little non-diamond composition. The structure and composition of the film change when B is introduced in the crystalline lattice of the doped diamond films. The crystalline size decreases as the boron concentration increases. Noncrystalline carbon is found in the heavily boron-doped diamond films. The B concentration in the film increases in proportion, while the resistivity decreases to a constant level as boron/carbon ratio increases.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2004年第5期726-730,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金资助项目(No.50075039)
