摘要
采用一种新方法镀膜 /循环伏安法成功制备了钴氢氧化物修饰玻碳电极 .考察了影响钴氢氧化物膜电催化活性的因素 ,确定最佳富集时间为 2min ,最佳活性单元浓度为 9 90× 10 -4mol·L-1.讨论了成膜过程及机理 .膜氧化峰电流 (i0pa)与扫描速率 (v <0 60V·s-1)成正比 ,具有表面吸附反应特征 ,表面覆盖量约相当于 0 5个单层的氧化还原活性物质 .制得的钴氢氧化物膜修饰电极具有相当的稳定性 ,并对H2 O2 氧化表现出较高的电催化活性 .线性回归方程为 :Δipa( μA) =-2 10 3 6+2 3 72 0× 10 4CH2 O2 (mol·L-1) (R =0 9990 ,n =18) ,线性范围为 :1 43× 10 -5～ 1 80× 10 -2 mol·L-1,检出限为 :9 5 9× 10 -6mol·L-1( 3S/k) .
Cobalt hydroxide modified glassy carbon electrode was prepared by a new method——film plating/cyclic voltammetry. Various factors affecting the electrocatalytic activity of cobalt hydroxide film were investigated, with the optimal time of cathodic enrichment and the optimal concentration of active species being 2 min and 9.90×10^(-4) mol·L^(-1), respectively. The process and mechanism of film-forming were discussed. The anodic peak current i^0_(pa) of cobalt hydroxide film was proportional to scanning rate (v=0.60 V·s^(-1)), indicating the characteristics of a surface adsorbed redox species corresponding to 0.5 monolayer. The resulting cobalt hydroxide film modified electrode had considerable stability and showed high electrocatalytic activity towards the oxidation of H_2O_2. The linear regression equation is Δi_(pa)(μA)=-2.1036+2.3720×10~4 C_(H_2O_2) (mol·L^(-1)) (R=0.9990, n=18) and the linear range for the determination of H_2O_2 is 1.43×10^(-5)～1.80×10^(-2) mol·L^(-1) with a detection limit of 9.59×10^(-6) mol·L^(-1)(3S/k).
出处
《化学学报》
SCIE
CAS
CSCD
北大核心
2004年第20期2067-2072,F009,共7页
Acta Chimica Sinica
基金
国家自然科学基金 (No.2 0 0 750 1 2 )资助项目
