摘要
报导了自行研制的InGaP/GaAs双结太阳电池,电池的转换效率在21%～24%之间(1AM0,28℃),填充因子在79%～82%之间。文中对其材料结构设计、器件工艺制作以及性能测量表征等方面的问题进行了讨论。
The design and fabrication of InGaP/GaAs dual-junction tandem solar cells were reported. Efficiency between 21%-24% (AMO, 28°C) and filling factor between 79%-82% have been measured. The problems related to material structure design, device processing as well as performance characterization also have been discussed.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2004年第5期620-623,共4页
Acta Energiae Solaris Sinica
关键词
光伏
串接太阳电池
化合物半导体
INGAP/GAAS
Fabrication
Optimization
Semiconducting gallium arsenide
Semiconducting indium compounds
Solar radiation
Structural design
