摘要
以微腔激光器的典型代表垂直腔面发射半导体激光器(VCSEL)为例,选择自发辐射因子为控制参数,数值模拟了大信号深度调制情形下VCSEL的非线性动力学特性,实现了类似于边缘发射激光器的分岔,周期加倍分岔,多稳和混沌状态的稳定控制,得到分岔点位置和周期轨道与控制参数的变化关系,以及相应地调制参量和自发辐射因子的取值范围,计算结果较好地拟合了文献实验结果。
We numerically study bifurcation and modulation response time when switching through chaos control with the high frequency large signal modulation method in a VCSEL (Vertical-cavity-surface-emitting Lasers) that is subject to spontaneous emission factor. In particular, it has been demonstrated that a VCSEL with parameter control can be bifurcation, period doubling, period quadrupling, multi-stable and chaos phenomena, analogous to those of non-linear EEL (Edge-emitting Lasers). Our calculations show that the chaotic behavior of a VCSEL under large-signal modulation can be suppressed using a large value of spontaneous emission factor. In addition, the position of the bifurcation and period track dependence of representative parameter. Good agreement was acquired between the simulation results and the experimental results.
出处
《通信学报》
EI
CSCD
北大核心
2004年第9期169-174,共6页
Journal on Communications
基金
国家自然科学基金(10174057
90201011)
四川省应用基础科学研究基金(03JY029048-1)
高等学校博士点科研基金(20030613007)
国家重点实验室开放课题基金(2002KF)
关键词
微腔激光器
VCSEL
自发辐射因子
调制度
调制频率
分岔
micro-cavity laser
VCSEL
spontaneous emission factor
modulation index
modulation frequency
bifurcation