摘要
针对蓝宝石传统湿式游离磨粒抛光材料去除率低的问题,本文提出了基于蓝宝石与SiO2磨料固相反应的干式化学机械抛光。通过实验分析了蓝宝石干式抛光工艺参数对抛光结果的影响。在此基础上,采用较优加工参数对蓝宝石基片工件进行了抛光实验。结果表明,采用聚氨酯抛光垫、粒径为200nmSiO2磨料,转速50r/min和压力33.2kPa时,粗抛光后的蓝宝石基片Ra为6.0nm,去除速度为5.3mg/h,是相同条件下湿式抛光去除速度(2.4mg/h)的2倍以上。
Aiming at the problem of low removal rate of traditional wet dissociated abrasives polishing sapphire,based on solidphase reaction of sapphire and SiO2,the dry CMP(chemical mechanical polishing) was presented.The effects of dry polishing procedure of sapphire to result were analyzed by experiment.On this bases,the better parameter polishsapphire subtrate was used.The results show that using polyurethane pad,particle size of SiO2 is 200nm,rotation rate is 50r/min and the stress is 33.2kpa,surface roughness of the sapphire subtrate is 6.0nm after rough polishing.The disposal efficiency is 5.3mg/h.It is the same conditions in disposal efficiency(2.4mg/h) of wet polishing 2 or more times.
出处
《航空精密制造技术》
2013年第1期7-10,共4页
Aviation Precision Manufacturing Technology
基金
浙江省自然科学基金资助项目(Y1091134)
关键词
蓝宝石
去除率
干式CMP
固相反应
工艺参数
sapphire
disposal efficiency
dry chemical mechanical polishing
solid-phase reaction
processing parameter
