摘要
硅基Micro-LED微显示技术是将自发光的LED器件与成熟的CMOS硅片结合在一起的技术,是下一代主流显示技术的热点发展方向。本文设计了一种用于Micro-LED微显示的有源驱动电路,并在该电路的基础上,结合晶圆级金金键合、深硅刻蚀、氮化镓ICP刻蚀、金属IBE刻蚀等工艺技术,制作出了硅基Micro-LED微显示器件,并能成功点亮和显示图像。其有望在AR/VR等领域实现产业运用的价值。
Silicon-based Micro-LED micro display technology is a technology that combines self-luminous LED devives with mature CMOS chips.It is a major development direction for the next generation of mainstream display technology.In this paper,an active driving circuit for Micro-LED display is designed.Based on this circuit,silicon-based Micro-LED devices are successfully fabricated by wafer level gold bonding,deep silicon etching,gallium nitride ICP etching and metal IBE etching.Finally,the device can light up and display images.It is expected to realize industrial application value in AR/VR and other fields.
作者
李晓剑
杨洪宝
朱毅
LI Xiaojian;YANG Hongbao;ZHU Yi(The 55th Research Institute of China Electronic Technology Group Corporation,Nanjing 210016,China)
出处
《微纳电子与智能制造》
2021年第4期32-39,共8页
Micro/nano Electronics and Intelligent Manufacturing
