The presence of SnZn-related defects in Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)absorber results in large irreversible energy loss and extra irreversible electron-hole non-radiative recombination,thus hindering the efficiency enh...The presence of SnZn-related defects in Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)absorber results in large irreversible energy loss and extra irreversible electron-hole non-radiative recombination,thus hindering the efficiency enhancement of CZTSSe devices.Although the incorporation of Ag in CZTSSe can effectively suppress the SnZn-related defects and significantly improve the resulting cell performance,an excellent efficiency has not been achieved to date primarily owing to the poor electrical-conductivity and the low carrier density of the CZTSSe film induced by Ag substitution.Herein,this study exquisitely devises an Ag/H co-doping strategy in CZTSSe absorber via Ag substitution programs followed by hydrogen-plasma treatment procedure to suppress SnZn defects for achieving efficient CZTSSe devices.In-depth investigation results demonstrate that the incorporation of H in Ag-based CZTSSe absorber is expected to improve the poor electrical-conductivity and the low carrier density caused by Ag substitution.Importantly,the C=O and O-H functional groups induced by hydrogen incorporation,serving as an electron donor,can interact with under-coordinated cations in CZTSSe material,effectively passivating the SnZn-related defects.Consequently,the incorporation of an appropriate amount of Ag/H in CZTSSe mitigates carrier non-radiative recombination,prolongs minority carrier lifetime,and thus yields a champion efficiency of 14.74%,showing its promising application in kesterite-based CZTSSe devices.展开更多
The Zn/Sn ratio in Cu2ZnSn（S, Se）4 （CZTSSe） films has been regulated to control the composition-related phase, defect, and photoelectric properties for high performance kesterite solar cells. It is found that the ...The Zn/Sn ratio in Cu2ZnSn（S, Se）4 （CZTSSe） films has been regulated to control the composition-related phase, defect, and photoelectric properties for high performance kesterite solar cells. It is found that the increase in the Zn/Sn ratio can slightly narrow the energy band gap to extend the light absorption range and improve the photocurrent. Optimal Zn/Sn ratio of 1.39 in CZTSSe film is obtained with the least secondary phase, the lowest defect density, and the longest charge recombination lifetime. Up to 10.1% photoelectric conversion efficiency has been achieved by this composition regulation.展开更多
The kesterite Cu2ZnSn（S,Se）4 （CZTSSe） solar cells have yielded a prospective conversion efficiency among all thin- film photovoltaic technology. However, its further development is still hindered by the lower open...The kesterite Cu2ZnSn（S,Se）4 （CZTSSe） solar cells have yielded a prospective conversion efficiency among all thin- film photovoltaic technology. However, its further development is still hindered by the lower open-circuit voltage （Voc）, and the non-ideal bandgap of the absorber is an important factor affecting this issue. The substitution of Sn with Ge provides a unique ability to engineer the bandgap of the absorber film. Herein, a simple precursor solution approach was successfully developed to fabricate Cu2Zn（SnyGel_y）（SxSe~ x）4 （CZTGSSe） solar cells. By precisely adjusting the Ge content in a small range, the Voc and Jsc are enhanced simultaneously. Benefitting from the optimized bandgap and the maintained spike structure and light absorption, the 10% Ge/（Ge＋Sn） content device with a bandgap of approximately 1.1 eV yields the highest efficiency of 9.36%. This further indicates that a precisely controlled Ge content could further improve the cell performance for efficient CZTGSSe solar cells.展开更多
Employing green and economic solvent-free synthesis route, hexagonal iron sulfide （Fe7Ss） nanoflowers were successfully synthesized for the first time. In the experiment, ferric hexadecylxanthate was used as the pre...Employing green and economic solvent-free synthesis route, hexagonal iron sulfide （Fe7Ss） nanoflowers were successfully synthesized for the first time. In the experiment, ferric hexadecylxanthate was used as the precursor, and hexagonal iron sulfide （Fe7Ss） nanoflowers were obtained by thermal decomposition of the precursor at 260 ~C without any additional solvent or inert gas protection. The as-prepared iron sulfide nanoflowers were characterized by means of X-ray diffraction （XRD）, transmission electron microscopy （TEM）, scanning electron microscopy （SEM） and energy dispersive spectrometry （EDS）. The characterization results indicated that the nanoflowers had uniform size distribution with an average size of about 160 rim. The proposed strategy provides a possible general route for the synthesis of other metal chalcogenide nanostructures.展开更多
基金supported by the National Natural Science Foundation of China(51802081,62074052,and 62104061)the Natural Science Foundation of Henan Province(232300420145).
文摘The presence of SnZn-related defects in Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)absorber results in large irreversible energy loss and extra irreversible electron-hole non-radiative recombination,thus hindering the efficiency enhancement of CZTSSe devices.Although the incorporation of Ag in CZTSSe can effectively suppress the SnZn-related defects and significantly improve the resulting cell performance,an excellent efficiency has not been achieved to date primarily owing to the poor electrical-conductivity and the low carrier density of the CZTSSe film induced by Ag substitution.Herein,this study exquisitely devises an Ag/H co-doping strategy in CZTSSe absorber via Ag substitution programs followed by hydrogen-plasma treatment procedure to suppress SnZn defects for achieving efficient CZTSSe devices.In-depth investigation results demonstrate that the incorporation of H in Ag-based CZTSSe absorber is expected to improve the poor electrical-conductivity and the low carrier density caused by Ag substitution.Importantly,the C=O and O-H functional groups induced by hydrogen incorporation,serving as an electron donor,can interact with under-coordinated cations in CZTSSe material,effectively passivating the SnZn-related defects.Consequently,the incorporation of an appropriate amount of Ag/H in CZTSSe mitigates carrier non-radiative recombination,prolongs minority carrier lifetime,and thus yields a champion efficiency of 14.74%,showing its promising application in kesterite-based CZTSSe devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51627803,51402348,51421002,51372270,and 51372272)the Knowledge Innovation Program of the Chinese Academy of Sciences
文摘The Zn/Sn ratio in Cu2ZnSn（S, Se）4 （CZTSSe） films has been regulated to control the composition-related phase, defect, and photoelectric properties for high performance kesterite solar cells. It is found that the increase in the Zn/Sn ratio can slightly narrow the energy band gap to extend the light absorption range and improve the photocurrent. Optimal Zn/Sn ratio of 1.39 in CZTSSe film is obtained with the least secondary phase, the lowest defect density, and the longest charge recombination lifetime. Up to 10.1% photoelectric conversion efficiency has been achieved by this composition regulation.
基金Project supported by the Joint Talent Cultivation Funds of NSFC-HN(Grant No.U1604138)the National Natural Science Foundation of China(Grant Nos.21603058 and 51702085)+2 种基金the Innovation Research Team of Science and Technology in Henan Province,China(Grant No.17IRTSTHN028)the Science and Technology Innovation Talents in Universities of Henan Province,China(Grant No.18HASTIT016)the Young Key Teacher Foundation of Universities of Henan Province,China(Grant No.2015GGJS-022)
文摘The kesterite Cu2ZnSn（S,Se）4 （CZTSSe） solar cells have yielded a prospective conversion efficiency among all thin- film photovoltaic technology. However, its further development is still hindered by the lower open-circuit voltage （Voc）, and the non-ideal bandgap of the absorber is an important factor affecting this issue. The substitution of Sn with Ge provides a unique ability to engineer the bandgap of the absorber film. Herein, a simple precursor solution approach was successfully developed to fabricate Cu2Zn（SnyGel_y）（SxSe~ x）4 （CZTGSSe） solar cells. By precisely adjusting the Ge content in a small range, the Voc and Jsc are enhanced simultaneously. Benefitting from the optimized bandgap and the maintained spike structure and light absorption, the 10% Ge/（Ge＋Sn） content device with a bandgap of approximately 1.1 eV yields the highest efficiency of 9.36%. This further indicates that a precisely controlled Ge content could further improve the cell performance for efficient CZTGSSe solar cells.
基金the National Natural Science Foundation of China，the Joint Talent Cultivation Funds of NSFC-HN，the New Century Excellent Talents in University，the Scientific Research Foundation of Henan University
文摘Employing green and economic solvent-free synthesis route, hexagonal iron sulfide （Fe7Ss） nanoflowers were successfully synthesized for the first time. In the experiment, ferric hexadecylxanthate was used as the precursor, and hexagonal iron sulfide （Fe7Ss） nanoflowers were obtained by thermal decomposition of the precursor at 260 ~C without any additional solvent or inert gas protection. The as-prepared iron sulfide nanoflowers were characterized by means of X-ray diffraction （XRD）, transmission electron microscopy （TEM）, scanning electron microscopy （SEM） and energy dispersive spectrometry （EDS）. The characterization results indicated that the nanoflowers had uniform size distribution with an average size of about 160 rim. The proposed strategy provides a possible general route for the synthesis of other metal chalcogenide nanostructures.
