YAG： 1% （atom fraction） Yb^3＋ , 0.5% （atom fraction） Er3＋ transparent ceramics were fabricated by the solid state reaction method using high-purity Y2O3, Al2O3, Yb2O3, and Er2O3 powders as starting materials. T...YAG： 1% （atom fraction） Yb^3＋ , 0.5% （atom fraction） Er3＋ transparent ceramics were fabricated by the solid state reaction method using high-purity Y2O3, Al2O3, Yb2O3, and Er2O3 powders as starting materials. The mixed powder compact was sintered at 1760 ℃ for 6 h in vacuum and annealed at 1500 ℃ for 10 h in an air atmosphere. The ceramics consisted of about 10μm grains and exhibited a pore-free structure. The optical transmittance of the ceramics at 1064 nm was nearly 80%. Upconversion emissions were investigated on the ceramics pumped by a 980 nm continuous wave diode laser, and strong green emission centered at 523 and 559 nm and red emission centered at 669 nm were observed, which originated from the radiative transitions of ^2H11/2→^4I15/2, ^4S3/2→^4I15/2, and ^4F9/2→^4I15/2 of Er^3＋ ions, respectively.展开更多
Cubic YAG：Yb3＋, Ho3＋ pure phase nanocrystals were synthesized by using coprecipition nitrate and ammonium hydrogen carbonate as raw materials.After calcining the precipitates at 800 °C, the resultant YAG：Yb3...Cubic YAG：Yb3＋, Ho3＋ pure phase nanocrystals were synthesized by using coprecipition nitrate and ammonium hydrogen carbonate as raw materials.After calcining the precipitates at 800 °C, the resultant YAG：Yb3＋, Ho3＋ nanocrystals were nearly spheric and the particle size was about 40 nm.Intense upconversion spectra were observed on the powder compact pumped by a 980 nm continuous wave diode laser, and green emission centered at 549 nm, red emission centered at 667 nm, and NIR centered at 760 nm were all due to two photons process, which originated from 5S2（5F4）→5I8, 5F5→5I8, and 5S2（5F4）→5I7 transitions, respectively.展开更多
Research on the laser ablation behavior of SiC ceramics has great significance for the improvement of their anti-laser ability as high-performance mirrors in space and lasers, or the laser surface micro-machining tech...Research on the laser ablation behavior of SiC ceramics has great significance for the improvement of their anti-laser ability as high-performance mirrors in space and lasers, or the laser surface micro-machining technology as electronic components in micro-electron mechanical systems (MEMS). In this work, the laser ablation of SiC ceramics has been performed by using laser pulses of 12 ns duration at 1064 nm. The laser induced damage threshold (LIDT) below 0.1 J/cm(2) was obtained by 1-on-1 mode and its damage morphology appeared in the form of 'burning crater' with a clear boundary. Micro-Raman mapping technique was first introduced in our study on the laser ablation mechanisms of SiC surface by identifying physical and chemical changes between uninjured and laser-ablated areas. It has been concluded that during the ablation process, SiC surface mainly underwent decomposition to the elemental Si and C, accompanied by some transformation of crystal orientation. The oxidation of SiC also took place but only in small amount on the edges of target region, while there was no hint of SiO2 in the center with higher energy density, maybe because of deficiency of O-2 atmosphere in the ablated area, elimination of SiO2 by carbon at 1505 degrees C, or evaporating at 2230 degrees C.展开更多
基金Project supported bythe National Natural Science Foundation of China (50372075)
文摘YAG： 1% （atom fraction） Yb^3＋ , 0.5% （atom fraction） Er3＋ transparent ceramics were fabricated by the solid state reaction method using high-purity Y2O3, Al2O3, Yb2O3, and Er2O3 powders as starting materials. The mixed powder compact was sintered at 1760 ℃ for 6 h in vacuum and annealed at 1500 ℃ for 10 h in an air atmosphere. The ceramics consisted of about 10μm grains and exhibited a pore-free structure. The optical transmittance of the ceramics at 1064 nm was nearly 80%. Upconversion emissions were investigated on the ceramics pumped by a 980 nm continuous wave diode laser, and strong green emission centered at 523 and 559 nm and red emission centered at 669 nm were observed, which originated from the radiative transitions of ^2H11/2→^4I15/2, ^4S3/2→^4I15/2, and ^4F9/2→^4I15/2 of Er^3＋ ions, respectively.
基金supported by the National Natural Science Foundation of China (50372075)Shanghai Light-Tech Project (036105021)Singapore AStar SERC (052 101 0039)
文摘Cubic YAG：Yb3＋, Ho3＋ pure phase nanocrystals were synthesized by using coprecipition nitrate and ammonium hydrogen carbonate as raw materials.After calcining the precipitates at 800 °C, the resultant YAG：Yb3＋, Ho3＋ nanocrystals were nearly spheric and the particle size was about 40 nm.Intense upconversion spectra were observed on the powder compact pumped by a 980 nm continuous wave diode laser, and green emission centered at 549 nm, red emission centered at 667 nm, and NIR centered at 760 nm were all due to two photons process, which originated from 5S2（5F4）→5I8, 5F5→5I8, and 5S2（5F4）→5I7 transitions, respectively.
基金funds from the National Natural Science Foundation of China
文摘Research on the laser ablation behavior of SiC ceramics has great significance for the improvement of their anti-laser ability as high-performance mirrors in space and lasers, or the laser surface micro-machining technology as electronic components in micro-electron mechanical systems (MEMS). In this work, the laser ablation of SiC ceramics has been performed by using laser pulses of 12 ns duration at 1064 nm. The laser induced damage threshold (LIDT) below 0.1 J/cm(2) was obtained by 1-on-1 mode and its damage morphology appeared in the form of 'burning crater' with a clear boundary. Micro-Raman mapping technique was first introduced in our study on the laser ablation mechanisms of SiC surface by identifying physical and chemical changes between uninjured and laser-ablated areas. It has been concluded that during the ablation process, SiC surface mainly underwent decomposition to the elemental Si and C, accompanied by some transformation of crystal orientation. The oxidation of SiC also took place but only in small amount on the edges of target region, while there was no hint of SiO2 in the center with higher energy density, maybe because of deficiency of O-2 atmosphere in the ablated area, elimination of SiO2 by carbon at 1505 degrees C, or evaporating at 2230 degrees C.
