The grain boundaries（GBs） in continuous films or domains of MoS2 are vital to its optical and electrical properties. Almost all previous approaches for GBs visualization are based on microscopy and spectroscopy and ...The grain boundaries（GBs） in continuous films or domains of MoS2 are vital to its optical and electrical properties. Almost all previous approaches for GBs visualization are based on microscopy and spectroscopy and only effective for domains with less than several micrometers in size. Here we report a simple method for the visualization of large GBs in MoS2 surface by optical microscope. Gold was deposited on the MoS2 grown by chemical vapor deposition,and then the GBs could be observed by optical microscope.Upon gold deposition on MoS2, the entire GBs of large-area MoS2 were clearly visualized using this method. To verify the result, the GBs were also characterized via scanning electron microscopy, transmission electron microscopy and atomic force microscopy. It showed the small particles of gold were clustered together on GBs, which had a larger binding energy than the inner regions. The method is universal and allows for the nondestructive identification of the GBs in any two dimensional materials with large area.展开更多
Balanced carrier transport is observed in acceptor-acceptor （A-A＇） type polymer for ambipolar organic thin-film transistors （OTFTs）. It is found that the incorporation of two electron-accepting moieties （BTz and...Balanced carrier transport is observed in acceptor-acceptor （A-A＇） type polymer for ambipolar organic thin-film transistors （OTFTs）. It is found that the incorporation of two electron-accepting moieties （BTz and IIG） into a polymer main chain to form A-A＇ polymer PIIG-BTz could lower highest occupied molecular orbital （HOMO） and lowest unoccupied molecular orbital （LUMO） levels and facilitate good molecular stacking of the polymer. Ambipolar transistor behaviour for PIIG-BTz, with the balanced hole and electron mobilities of 0.030 and 0.022 cm2 V 1 s-i was observed in OTFT devices, respectively. The study in this work reveals that the utilization of acceptor-acceptor （A-A＇） structure in polymer main chain can be a feasible strategy to develop ambipolar polymer semiconductors.展开更多
基金supported by the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB12010000)the National Natural Science Foundation of China (21573253)
文摘The grain boundaries（GBs） in continuous films or domains of MoS2 are vital to its optical and electrical properties. Almost all previous approaches for GBs visualization are based on microscopy and spectroscopy and only effective for domains with less than several micrometers in size. Here we report a simple method for the visualization of large GBs in MoS2 surface by optical microscope. Gold was deposited on the MoS2 grown by chemical vapor deposition,and then the GBs could be observed by optical microscope.Upon gold deposition on MoS2, the entire GBs of large-area MoS2 were clearly visualized using this method. To verify the result, the GBs were also characterized via scanning electron microscopy, transmission electron microscopy and atomic force microscopy. It showed the small particles of gold were clustered together on GBs, which had a larger binding energy than the inner regions. The method is universal and allows for the nondestructive identification of the GBs in any two dimensional materials with large area.
基金supported by the National Natural Science Foundation of China (51173055, 21504026, 51572094)the National Basic Research Program of China (2013CBA01600)the China Postdoctoral Science Foundation (2013M542009)
文摘Balanced carrier transport is observed in acceptor-acceptor （A-A＇） type polymer for ambipolar organic thin-film transistors （OTFTs）. It is found that the incorporation of two electron-accepting moieties （BTz and IIG） into a polymer main chain to form A-A＇ polymer PIIG-BTz could lower highest occupied molecular orbital （HOMO） and lowest unoccupied molecular orbital （LUMO） levels and facilitate good molecular stacking of the polymer. Ambipolar transistor behaviour for PIIG-BTz, with the balanced hole and electron mobilities of 0.030 and 0.022 cm2 V 1 s-i was observed in OTFT devices, respectively. The study in this work reveals that the utilization of acceptor-acceptor （A-A＇） structure in polymer main chain can be a feasible strategy to develop ambipolar polymer semiconductors.
