In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for th...In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.展开更多
The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics.In this work,TiN/Hf_(0.5)Zr_(0.5)O_(2)/TiN capacitors that are fre...The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics.In this work,TiN/Hf_(0.5)Zr_(0.5)O_(2)/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature(300 K)to cryogenic temperature(30 K).We observe a consistent decrease in permittivity(εr)and a progressive increase in coercive electric field(Ec)as temperatures decrease.Our investigation reveals exceptional stability in the double remnant polarization(2P_(r))of our ferroelectric thin films across a wide temperature range.Specifically,at 30 K,a 2P_(r)of 36μC/cm^(2)under an applied electric field of 3.0 MV/cm is achieved.Moreover,we observed a reduced fatigue effect at 30 K in comparison to 300 K.The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO_(2)based ferroelectric thin films for cryo-electronics applications.展开更多
The reservoir computing(RC)system,known for its ability to seamlessly integrate memory and computing functions,is considered as a promising solution to meet the high demands for time and energy-efficient computing in ...The reservoir computing(RC)system,known for its ability to seamlessly integrate memory and computing functions,is considered as a promising solution to meet the high demands for time and energy-efficient computing in the current big data landscape,compared with traditional silicon-based computing systems that have a noticeable disadvantage of separate storage and computation.This review focuses on in-materio RC based on nanowire networks(NWs)from the perspective of materials,extending to reservoir devices and applications.The common methods used in preparing nanowires-based reservoirs,including the synthesis of nanowires and the construction of networks,are firstly systematically summarized.The physical principles of memristive and memcapacitive junctions are then explained.Afterwards,the dynamic characteristics of nanowires-based reservoirs and their computing capability,as well as the neuromorphic applications of NWs-based RC systems in recognition,classification,and forecasting tasks,are explicated in detail.Lastly,the current challenges and future opportunities facing NWs-based RC are highlighted,aiming to provide guidance for further research.展开更多
基金funded in part by the National Key R&D Program of China(Grant No.2022YFB3606900)in part by the National Natural Science of China(Grant No.62004217)。
文摘In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.
基金supported by the National Key R&D Program of China under Grant No.2022YFB3608400National Natural Science Foundation of China under Grant Nos.61825404,61888102,and 62104044the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000 and the project of MOE innovation platform.
文摘The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics.In this work,TiN/Hf_(0.5)Zr_(0.5)O_(2)/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature(300 K)to cryogenic temperature(30 K).We observe a consistent decrease in permittivity(εr)and a progressive increase in coercive electric field(Ec)as temperatures decrease.Our investigation reveals exceptional stability in the double remnant polarization(2P_(r))of our ferroelectric thin films across a wide temperature range.Specifically,at 30 K,a 2P_(r)of 36μC/cm^(2)under an applied electric field of 3.0 MV/cm is achieved.Moreover,we observed a reduced fatigue effect at 30 K in comparison to 300 K.The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO_(2)based ferroelectric thin films for cryo-electronics applications.
基金financially supported by the National Key R&D Program of China(Grant No.2020AAA0109005)the Strategy Priority Research Program of Chinese Academy of Sciences(Grant No.XDA0330100)+1 种基金the Beijing Municipal Science&Technology Commission Program of China(Grant No.Z201100004320004)the China Association for Science and Technology(Grant No.2019Q1NRC001).
文摘The reservoir computing(RC)system,known for its ability to seamlessly integrate memory and computing functions,is considered as a promising solution to meet the high demands for time and energy-efficient computing in the current big data landscape,compared with traditional silicon-based computing systems that have a noticeable disadvantage of separate storage and computation.This review focuses on in-materio RC based on nanowire networks(NWs)from the perspective of materials,extending to reservoir devices and applications.The common methods used in preparing nanowires-based reservoirs,including the synthesis of nanowires and the construction of networks,are firstly systematically summarized.The physical principles of memristive and memcapacitive junctions are then explained.Afterwards,the dynamic characteristics of nanowires-based reservoirs and their computing capability,as well as the neuromorphic applications of NWs-based RC systems in recognition,classification,and forecasting tasks,are explicated in detail.Lastly,the current challenges and future opportunities facing NWs-based RC are highlighted,aiming to provide guidance for further research.
