A method to control the size of nanoscale silicon grown in thermally annealed hydrogenated amorphous silicon （a-Si：H） films is reported. Using the characterizing techniques of micro-Raman scattering, X-ray diffract...A method to control the size of nanoscale silicon grown in thermally annealed hydrogenated amorphous silicon （a-Si：H） films is reported. Using the characterizing techniques of micro-Raman scattering, X-ray diffraction and computer simulation, it is found that the sizes of the formed silicon particles change with the temperature rising rate in thermally annealing the a-Si ： H films. When the a-Si：H films have been annealed with high rising rate（～100℃/s）, the sizes of nanoscale silicon particles are in the range of 1.6～15nm. On the other hand, if the a-Si：H films have been annealed with low temperature rising rate（～1℃/s）, the sizes of nanoscale silicon particles are in the range of 23～46nm. Based on the theory of crystal nucleation and growth, the effect of temperature rising rate on the sizes of the formed silicon particles is discussed. Under high power laser irradiation, in situ nanocrystallization and subsequent nc-Si clusters are small enough for visible light emission, authors have not detected any visible photoluminescence（PL） from these nc-Si clusters before surface passivation. After electrochemical oxidization in hydrofluoric acid, however, intense red PL has been detected. Cyclic hydrofluoric oxidization and air exposure can cause subsequent blue shift in the red emission. The importance of surface passivation and quantum confinement in the visible emissions has been discussed.展开更多
The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four featur...The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250 nm for t =0.1 min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0. 1 min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4 min to 3 rain, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3 min, the root-mean-square decreases gradually, which means the deposition behavior from hyper-2D growth gradually turns into layer growth mode with the increase of growth time.展开更多
This paper constructs the probability model of Gunther generator at first, and the finite dimension union distribution of the output sequence is presented. The result shows that the output sequence is an independent a...This paper constructs the probability model of Gunther generator at first, and the finite dimension union distribution of the output sequence is presented. The result shows that the output sequence is an independent and uniformly distributed 0,1 random variable sequence. It gives the theoretical foundation about why Gunther generator can avoid the statistic weakness of the output sequence of stop-and-go generator, and analyzes the coincidence between output sequence and input sequences of Gunther generator. The conclusions of this paper would offer theoretical references for designers and analyzers of clock-controlled generators.展开更多
In this paper, an equivalent condition of a graph G with t （2≤ t ≤n） distinct Laplacian eigenvalues is established. By applying this condition to t = 3, if G is regular （necessarily be strongly regular）, an equi...In this paper, an equivalent condition of a graph G with t （2≤ t ≤n） distinct Laplacian eigenvalues is established. By applying this condition to t = 3, if G is regular （necessarily be strongly regular）, an equivalent condition of G being Laplacian integral is given. Also for the case of t = 3, if G is non-regular, it is found that G has diameter 2 and girth at most 5 if G is not a tree. Graph G is characterized in the case of its being triangle-free, bipartite and pentagon-free. In both cases, G is Laplacian integral.展开更多
In this paper, we investigate the periodic boundary value problems for nonlinear first order functional differential equations. By establishing a new comparison result, criteria on the existence of maximal and minimal...In this paper, we investigate the periodic boundary value problems for nonlinear first order functional differential equations. By establishing a new comparison result, criteria on the existence of maximal and minimal solutions are obtained.展开更多
文摘A method to control the size of nanoscale silicon grown in thermally annealed hydrogenated amorphous silicon （a-Si：H） films is reported. Using the characterizing techniques of micro-Raman scattering, X-ray diffraction and computer simulation, it is found that the sizes of the formed silicon particles change with the temperature rising rate in thermally annealing the a-Si ： H films. When the a-Si：H films have been annealed with high rising rate（～100℃/s）, the sizes of nanoscale silicon particles are in the range of 1.6～15nm. On the other hand, if the a-Si：H films have been annealed with low temperature rising rate（～1℃/s）, the sizes of nanoscale silicon particles are in the range of 23～46nm. Based on the theory of crystal nucleation and growth, the effect of temperature rising rate on the sizes of the formed silicon particles is discussed. Under high power laser irradiation, in situ nanocrystallization and subsequent nc-Si clusters are small enough for visible light emission, authors have not detected any visible photoluminescence（PL） from these nc-Si clusters before surface passivation. After electrochemical oxidization in hydrofluoric acid, however, intense red PL has been detected. Cyclic hydrofluoric oxidization and air exposure can cause subsequent blue shift in the red emission. The importance of surface passivation and quantum confinement in the visible emissions has been discussed.
文摘The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250 nm for t =0.1 min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0. 1 min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4 min to 3 rain, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3 min, the root-mean-square decreases gradually, which means the deposition behavior from hyper-2D growth gradually turns into layer growth mode with the increase of growth time.
基金Supported by the Open Subject for Computer Network and Information Security Key Laboratory of Ministry of Education of China(20040108)
文摘This paper constructs the probability model of Gunther generator at first, and the finite dimension union distribution of the output sequence is presented. The result shows that the output sequence is an independent and uniformly distributed 0,1 random variable sequence. It gives the theoretical foundation about why Gunther generator can avoid the statistic weakness of the output sequence of stop-and-go generator, and analyzes the coincidence between output sequence and input sequences of Gunther generator. The conclusions of this paper would offer theoretical references for designers and analyzers of clock-controlled generators.
基金Supported by the Anhui Provincial Natural Science Foundation(050460102)National Natural Science Foundation of China(10601001,10571163)+3 种基金NSF of Department of Education of Anhui Province(2004kj027,2005kj005zd)Foundation of Anhui Institute of Architecture and Industry(200510307)Foundation of Mathematics Innovation Team of Anhui UniversityFoundation of Talents Group Construction of Anhui University
文摘In this paper, an equivalent condition of a graph G with t （2≤ t ≤n） distinct Laplacian eigenvalues is established. By applying this condition to t = 3, if G is regular （necessarily be strongly regular）, an equivalent condition of G being Laplacian integral is given. Also for the case of t = 3, if G is non-regular, it is found that G has diameter 2 and girth at most 5 if G is not a tree. Graph G is characterized in the case of its being triangle-free, bipartite and pentagon-free. In both cases, G is Laplacian integral.
基金Research supported by the NSF of Shandong Province (Y2004A01) the foundation of SDAI(XN040101).
文摘In this paper, we investigate the periodic boundary value problems for nonlinear first order functional differential equations. By establishing a new comparison result, criteria on the existence of maximal and minimal solutions are obtained.
