Flexible electronics offer a multitude of advantages,such as flexibility,lightweight property,portability,and high durability.These unique properties allow for seamless applications to curved and soft surfaces,leading...Flexible electronics offer a multitude of advantages,such as flexibility,lightweight property,portability,and high durability.These unique properties allow for seamless applications to curved and soft surfaces,leading to extensive utilization across a wide range of fields in consumer electronics.These applications,for example,span integrated circuits,solar cells,batteries,wearable devices,bio-implants,soft robotics,and biomimetic applications.Recently,flexible electronic devices have been developed using a variety of materials such as organic,carbon-based,and inorganic semiconducting materials.Silicon(Si)owing to its mature fabrication process,excellent electrical,optical,thermal properties,and cost efficiency,remains a compelling material choice for flexible electronics.Consequently,the research on ultra-thin Si in the context of flexible electronics is studied rigorously nowadays.The thinning of Si is crucially important for flexible electronics as it reduces its bending stiffness and the resultant bending strain,thereby enhancing flexibility while preserving its exceptional properties.This review provides a comprehensive overview of the recent efforts in the fabrication techniques for forming ultra-thin Si using top-down and bottom-up approaches and explores their utilization in flexible electronics and their applications.展开更多
Ordered GeSi nanowires with a ～ 10nm cross section are fabricated utilizing top-down and Ge condensation techniques. In transmission electron microscopy measurements, the obtained GeSi nanowires exhibit a single-crys...Ordered GeSi nanowires with a ～ 10nm cross section are fabricated utilizing top-down and Ge condensation techniques. In transmission electron microscopy measurements, the obtained GeSi nanowires exhibit a single-crystal structure and a smooth Ge/SiO2 interface. Due to the linear relationship between the cross-section area and the initial pattern size under the self-limited oxidation condition, the cross-section size of GeSi nanowires can be precisely controlled. The Raman spectra reveal a high Ge fraction （up to 97%） and a biaxial strain of the GeSi nanowires. This top-down technique is promising for fabrication of high-performance GeSi nanowire based optoelectronic devices.展开更多
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction,named as gate-controlled supercurrent(GCS),has raised great interest for fundamental an...The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction,named as gate-controlled supercurrent(GCS),has raised great interest for fundamental and technological reasons.To gain a deeper understanding of this effect and develop superconducting technologies based on it,the material and physical parameters crucial for the GCS effect must be identified.Top-down fabrication protocols should also be optimized to increase device scalability,although studies suggest that top-down fabricated devices are more resilient to show a GCS.Here,we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the noncentrosymmetric superconductor niobium rhenium with varying ratios of the constituents(NbRe).Unlike other devices previously reported and made with a top-down approach,our NbRe devices systematically exhibit a GCS effect when they were fabricated from NbRe thin films with small grain size and etched in specific conditions.These observations pave the way for the realization of top-down-made GCS devices with high scalability.Our results also imply that physical parameters like structural disorder and surface physical properties of the nanobridges,which can be in turn modified by the fabrication process,are crucial for a GCS observation,providing therefore also important insights into the physics underlying the GCS effect.展开更多
基金supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. RS-2024-00353768)the Yonsei Fellowship, funded by Lee Youn Jae. This study was funded by the KIST Institutional Program Project No. 2E31603-22-140 (K J Y). S M W acknowledges the support by National Research Foundation of Korea (NRF) grant funded by the Korea government (Grant Nos. NRF-2021R1C1C1009410, NRF2022R1A4A3032913 and RS-2024-00411904)
文摘Flexible electronics offer a multitude of advantages,such as flexibility,lightweight property,portability,and high durability.These unique properties allow for seamless applications to curved and soft surfaces,leading to extensive utilization across a wide range of fields in consumer electronics.These applications,for example,span integrated circuits,solar cells,batteries,wearable devices,bio-implants,soft robotics,and biomimetic applications.Recently,flexible electronic devices have been developed using a variety of materials such as organic,carbon-based,and inorganic semiconducting materials.Silicon(Si)owing to its mature fabrication process,excellent electrical,optical,thermal properties,and cost efficiency,remains a compelling material choice for flexible electronics.Consequently,the research on ultra-thin Si in the context of flexible electronics is studied rigorously nowadays.The thinning of Si is crucially important for flexible electronics as it reduces its bending stiffness and the resultant bending strain,thereby enhancing flexibility while preserving its exceptional properties.This review provides a comprehensive overview of the recent efforts in the fabrication techniques for forming ultra-thin Si using top-down and bottom-up approaches and explores their utilization in flexible electronics and their applications.
基金Supported by the State Key Program of the National Natural Science Foundation of China under Grant No 61335002the National High Technology Research and Development Program of China under Grant No 2015AA016904+1 种基金the National Natural Science Foundation of China under Grant No 11574102the National Basic Research Program of China under Grant Nos2013CB933303 and 2013CB632104
文摘Ordered GeSi nanowires with a ～ 10nm cross section are fabricated utilizing top-down and Ge condensation techniques. In transmission electron microscopy measurements, the obtained GeSi nanowires exhibit a single-crystal structure and a smooth Ge/SiO2 interface. Due to the linear relationship between the cross-section area and the initial pattern size under the self-limited oxidation condition, the cross-section size of GeSi nanowires can be precisely controlled. The Raman spectra reveal a high Ge fraction （up to 97%） and a biaxial strain of the GeSi nanowires. This top-down technique is promising for fabrication of high-performance GeSi nanowire based optoelectronic devices.
基金the European Union’s Horizon 2020 Research and Innovation Program under Grant Agreement No.964398(SuperGate)the US ONR(Nos.N00014-21-1-2879,N00014-20-1-2442,and N00014-23-1-2866).
文摘The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction,named as gate-controlled supercurrent(GCS),has raised great interest for fundamental and technological reasons.To gain a deeper understanding of this effect and develop superconducting technologies based on it,the material and physical parameters crucial for the GCS effect must be identified.Top-down fabrication protocols should also be optimized to increase device scalability,although studies suggest that top-down fabricated devices are more resilient to show a GCS.Here,we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the noncentrosymmetric superconductor niobium rhenium with varying ratios of the constituents(NbRe).Unlike other devices previously reported and made with a top-down approach,our NbRe devices systematically exhibit a GCS effect when they were fabricated from NbRe thin films with small grain size and etched in specific conditions.These observations pave the way for the realization of top-down-made GCS devices with high scalability.Our results also imply that physical parameters like structural disorder and surface physical properties of the nanobridges,which can be in turn modified by the fabrication process,are crucial for a GCS observation,providing therefore also important insights into the physics underlying the GCS effect.
