The self-heating effect severely limits device performance and reliability.Although some studies have revealed the heat distribution ofβ-Ga_(2)O_(3) MOSFETs under biases,those devices all have small areas and have di...The self-heating effect severely limits device performance and reliability.Although some studies have revealed the heat distribution ofβ-Ga_(2)O_(3) MOSFETs under biases,those devices all have small areas and have difficulty reflecting practical con-ditions.This work demonstrated a multi-fingerβ-Ga_(2)O_(3) MOSFET with a maximum drain current of 0.5 A.Electrical characteris-tics were measured,and the heat dissipation of the device was investigated through infrared images.The relationship between device temperature and time/bias is analyzed.展开更多
A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-f...A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I - V curves with the self-heating effect is obtained.展开更多
Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response an...Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves shown.We establish the effective thermal transient response model with stage superposition corresponding to the heating process.The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage.In the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of workload.As the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed.展开更多
For exploiting advantages of electron beam air plasma in some unusual applications, a Monte Carlo （MC） model coupled with heat transfer model is established to simulate the characteristics of electron beam air plasm...For exploiting advantages of electron beam air plasma in some unusual applications, a Monte Carlo （MC） model coupled with heat transfer model is established to simulate the characteristics of electron beam air plasma by considering the self-heating effect. Based on the model, the electron beam induced temperature field and the related plasma properties are investigated. The results indicate that a nonuniform temperature field is formed in the electron beam plasma region and the average temperature is of the order of 600 K. Moreover, much larger volume pear-shaped electron beam plasma is produced in hot state rather than in cold state. The beam ranges can, with beam energies of 75 keV and 80 keV, exceed 1.0 m and 1.2 m in air at pressure of 100 torr, respectively. Finally, a well verified formula is obtained for calculating the range of high energy electron beam in atmosphere.展开更多
A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region I - V model. The static current characteristics of 4H-SiC MESFET have been obtained with the c...A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region I - V model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physicalbased simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.展开更多
An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current levels. In this paper a novel solution to reduce the self-heating effect is proposed, based on N+ and ...An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current levels. In this paper a novel solution to reduce the self-heating effect is proposed, based on N+ and O+ co-implantation into silicon wafer to form a new buried layer structure. This new structure was simulated using Medici program, and the temperature distribution and output characteristics were compared with those of the conventional SOI counterparts. As expected, a reduction of self-heating effect in the novel SOI device was observed.展开更多
Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon...Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m ? 1·K? 1 versus 1.4 W·m? 1·K? 1). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electri-cal characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the appli-cations of SOI to high temperature conditions.展开更多
We use an electro-thermal coupled Monte Carlo simulation framework to investigate the self-heating effect（SHE） in 14 nm bulk n Fin FETs with ambient temperature（TA） from 220 to 400 K. Based on this method, nonloca...We use an electro-thermal coupled Monte Carlo simulation framework to investigate the self-heating effect（SHE） in 14 nm bulk n Fin FETs with ambient temperature（TA） from 220 to 400 K. Based on this method, nonlocal heat generation can be achieved. Contact thermal resistances of Si/Metal and Si/Si O_2 are selected to ensure that the source and drain heat dissipation paths are the first two heat dissipation paths. The results are listed below：（i） not all input power（Q_（input） turns into heat generation in the device region and some is taken out by the thermal non-equilibrium carriers, owing to the serious non-equilibrium transport;（ii） a higher TA leads to a larger ratio of input power turning into heat generation in the device region at the same operating voltages;（iii） SHE can lead to serious degradation in the carrier transport, which will increase when TA increases;（iv） the current degradation can be 8.9% when Vds = 0.7 V, Vgs = 1 V and TA = 400 K;（v） device thermal resistance（Rth） increases with increasing of TA, which is seriously impacted by the non-equilibrium transport. Hence, the impact of TA should be carefully considered when investigating SHE in nanoscale devices.展开更多
To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step b...To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step buried oxide（BOX） SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently.展开更多
Considering the self-heating effect, an accurate expression for the global interconnection resistance per unit length in terms of interconnection wire width and spacing is presented. Based on the proposed resistance m...Considering the self-heating effect, an accurate expression for the global interconnection resistance per unit length in terms of interconnection wire width and spacing is presented. Based on the proposed resistance model and according to the trade-off theory, a novel optimization analytical model of delay, power dissipation and bandwidth is derived. The proposed optimal model is verified and compared based on 90 nm, 65 nm and 40 nm CMOS technologies. It can be found that more optimum results can be easily obtained by the proposed model. This optimization model is more accurate and realistic than the conventional optimization models, and can be integrated into the global interconnection design ofnano-scale integrated circuits.展开更多
An analytical DC model accounting for the self-heating effect of polycrystalline silicon thin-film transistors（poly-Si TFTs） is presented.In deriving the model for the self-heating effect, the temperature dependence...An analytical DC model accounting for the self-heating effect of polycrystalline silicon thin-film transistors（poly-Si TFTs） is presented.In deriving the model for the self-heating effect, the temperature dependence of the effective mobility is studied in detail.Based on the mobility model and a first order approximation, a closed-form analytical drain current model considering the self-heating effect is derived.Compared with the available experimental data, the proposed model, which includes the self-heating and kink effects, provides an accurate description of the output characteristics over the linear, the saturation, and the kink regimes.展开更多
Low-electrode capacitive deionization(FCDI)is an emerging desalination technology with great potential for removal and/or recycling ions from a range of waters.However,it still suffers from inefficient charge transfer...Low-electrode capacitive deionization(FCDI)is an emerging desalination technology with great potential for removal and/or recycling ions from a range of waters.However,it still suffers from inefficient charge transfer and ion transport kinetics due to weak turbulence and low electric intensity in flow electrodes,both restricted by the current collectors.Herein,a new tip-array current collector(designated as T-CC)was developed to replace the conventional planar current collectors,which intensifies both the charge transfer and ion transport significantly.The effects of tip arrays on flow and electric fields were studied by both computational simulations and electrochemical impedance spectroscopy,which revealed the reduction of ion transport barrier,charge transport barrier and internal resistance.With the voltage increased from 1.0 to 1.5 and 2.0 V,the T-CC-based FCDI system(T-FCDI)exhibited average salt removal rates(ASRR)of 0.18,0.50,and 0.89μmol cm^(-2) min^(-1),respectively,which are 1.82,2.65,and 2.48 folds higher than that of the conventional serpentine current collectors,and 1.48,1.67,and 1.49 folds higher than that of the planar current collectors.Meanwhile,with the solid content in flow electrodes increased from 1 to 5 wt%,the ASRR for T-FCDI increased from 0.29 to 0.50μmol cm^(-2) min^(-1),which are 1.70 and 1.67 folds higher than that of the planar current collectors.Additionally,a salt removal efficiency of 99.89%was achieved with T-FCDI and the charge efficiency remained above 95%after 24 h of operation,thus showing its superior long-term stability.展开更多
Excellent progress has been made in the last few decades in the cure rates of pediatric malignancies,with more than 80%of children with cancer who have access to contemporary treatment being cured.However,the therapie...Excellent progress has been made in the last few decades in the cure rates of pediatric malignancies,with more than 80%of children with cancer who have access to contemporary treatment being cured.However,the therapies responsible for this survival can also produce adverse physical and psychological long-term outcomes,referred to as late effects,which appear months to years after the completion of cancer treatment.Research has shown that 60%to 90%of childhood cancer survivors(CCSs)develop one or more chronic health conditions,and 20%to 80%of survivors experience severe or life-threatening complications during adulthood.Therefore,understanding the late side effects of such treatments is important to improve the health and quality of life of the growing population of CCSs.展开更多
The microstructural evolution of a cold-rolled and intercritical annealed medium-Mn steel(Fe-0.10C-5Mn)was investigated during uniaxial tensile testing.In-situ observations under scanning electron microscopy,transmiss...The microstructural evolution of a cold-rolled and intercritical annealed medium-Mn steel(Fe-0.10C-5Mn)was investigated during uniaxial tensile testing.In-situ observations under scanning electron microscopy,transmission electron microscopy,and X-ray diffraction analysis were conducted to characterize the progressive transformation-induced plasticity process and associated fracture initiation mechanisms.These findings were discussed with the local strain measurements via digital image correlation.The results indicated that Lüders band formation in the steel was limited to 1.5%strain,which was mainly due to the early-stage martensitic phase transformation of a very small amount of the less stable large-sized retained austenite(RA),which led to localized stress concentrations and strain hardening and further retardation of yielding.The small-sized RA exhibited high stability and progressively transformed into martensite and contributed to a stably extended Portevin-Le Chatelier effect.The volume fraction of RA gradually decreased from 26.8%to 8.2%prior to fracture.In the late deformation stage,fracture initiation primarily occurred at the austenite/martensite and ferrite/martensite interfaces and the ferrite phase.展开更多
van der Waals(vdW)heterostructures constructed by lowdimensional(0D,1D,and 2D)materials are emerging as one of the most appealing systems in next-generation flexible photodetection.Currently,hand-stacked vdW-type phot...van der Waals(vdW)heterostructures constructed by lowdimensional(0D,1D,and 2D)materials are emerging as one of the most appealing systems in next-generation flexible photodetection.Currently,hand-stacked vdW-type photodetectors are not compatible with large-areaarray fabrication and show unimpressive performance in self-powered mode.Herein,vertical 1D GaN nanorods arrays(NRAs)/2D MoS_(2)/PEDOT:PSS in wafer scale have been proposed for self-powered flexible photodetectors arrays firstly.The as-integrated device without external bias under weak UV illumination exhibits a competitive responsivity of 1.47 A W^(−1)and a high detectivity of 1.2×10^(11)Jones,as well as a fast response speed of 54/71μs,thanks to the strong light absorption of GaN NRAs and the efficient photogenerated carrier separation in type-II heterojunction.Notably,the strain-tunable photodetection performances of device have been demonstrated.Impressively,the device at−0.78%strain and zero bias reveals a significantly enhanced photoresponse with a responsivity of 2.47 A W^(−1),a detectivity of 2.6×10^(11)Jones,and response times of 40/45μs,which are superior to the state-of-the-art self-powered flexible photodetectors.This work presents a valuable avenue to prepare tunable vdWs heterostructures for self-powered flexible photodetection,which performs well in flexible sensors.展开更多
The highly selective catalytic hydrogenation of halogenated nitroaromatics was achieved by employing Pd‑based catalysts that were co‑modified with organic and inorganic ligands.It was demonstrated that the catalysts c...The highly selective catalytic hydrogenation of halogenated nitroaromatics was achieved by employing Pd‑based catalysts that were co‑modified with organic and inorganic ligands.It was demonstrated that the catalysts contained Pd species in mixed valence states,with high valence Pd at the metal‑support interface and zero valence Pd at the metal surface.While the strong coordination of triphenylphosphine(PPh3)to Pd0 on the Pd surface prevents the adsorption of halogenated nitroaromatics and thus dehalogenation,the coordination of sodium metavanadate(NaVO3)to high‑valence Pd sites at the interface helps to activate H2 in a heterolytic pathway for the selective hydrogenation of nitro‑groups.The excellent catalytic performance of the interfacial active sites enables the selective hydrogenation of a wide range of halogenated nitroaromatics.展开更多
Using the software ANSYS-19.2/Explicit Dynamics,this study performedfinite-element modeling of the large-diameter steel pipeline cross-section for the Beineu-Bozoy-Shymkent gas pipeline with a non-through straight crac...Using the software ANSYS-19.2/Explicit Dynamics,this study performedfinite-element modeling of the large-diameter steel pipeline cross-section for the Beineu-Bozoy-Shymkent gas pipeline with a non-through straight crack,strengthened by steel wire wrapping.The effects of the thread tensile force of the steel winding in the form of single rings at the crack edges and the wires with different winding diameters and pitches were also studied.The results showed that the strengthening was preferably executed at a minimum value of the thread tensile force,which was 6.4%more effective than that at its maximum value.The analysis of the influence of the winding dia-meters showed that the equivalent stresses increased by 32%from the beginning of the crack growth until the wire broke.The increment in winding diameter decelerated the disclosure of the edge crack and reduced its length by 8.2%.The analysis of the influence of the winding pitch showed that decreasing the distance between the winding turns also led to a 33.6%reduction in the length of the straight crack and a 7.9%reduction in the maximum stres-ses on the strengthened pipeline cross-section.The analysis of the temperature effect on the pipeline material,within a range from-40℃ to+50℃,resulted in a crack length change of up to 5.8%.As the temperature dropped,the crack length decreased.Within such a temperature range,the maximum stresses were observed along the cen-tral area of the crack,which were equal to 413 MPa at+50℃ and 440 MPa at-40℃.The results also showed that the presence of the steel winding in the pipeline significantly reduced the length of crack propagation up to 8.4 times,depending on the temperature effect and design parameters of prestressing.This work integrated the existing methods for crack localization along steel gas pipelines.展开更多
This study was conducted at Fafan Research Center, Golajo research site to evaluate the effect of Moringa stenopetala and pigeon pea leaf supplementation on growth performance of short-eared Somali goat breed. A total...This study was conducted at Fafan Research Center, Golajo research site to evaluate the effect of Moringa stenopetala and pigeon pea leaf supplementation on growth performance of short-eared Somali goat breed. A total of fifteen yearling indigenous short-eared Somali goat breeds with an initial weight of 15.2 ± 0.30 kg were assigned to three treatment groups using completely randomized design. Pigeon pea (Pp) and Moringa stenopetala (MS) feeds were formulated using 0%, 5%, and 10% inclusion levels of MSLM and PPLM as experimental diets, respectively. The feed of the experiment was prepared in two levels (2 kg of Moringa stenopetala and 2 kg of pigeon pea) and was supplemented to experimental animals in treatments one and two, respectively. The average e initial body weight of selected male goats was 18.82 ± 0.37, 18.8 ± 0.37 and 17.8 ± 0.37 kg under treatment groups T1, T2 and control respectively. Data was analyzed using general linear model (GLM) procedure of SAS computer package Version 9.0 (SAS, 2002). The final weights gain (FWG) of goats on T1 and T2 of experimental group was significantly (P 0.05) the final weight gain of goat supplemented on Moringa stenopetala (T1) and pigeon pea levels (T2). The mean average weight gains (AWG) obtained from the supplemented group in this study were 7.50 ± 0.37 and 7.82 ± 0.37 kg for T1 and T2, whereas mean weight gains for un-supplemented goats were found to be 6.26 ± 0.37 kg. Feeding of dried Moringa stenopetala and pigeon pea leaves mixture improved body weights and average daily body weight gain without affecting feed intake and overall health of Somali goat breed. As Moringa stenopetala and pigeon pea leaves are rich nitrogen/protein source, they can be used effectively as substitute for conventional concentrate in the diet of growing goats at small holder farmer’s level where they can be grown in abundance. Therefore, for higher quality of forage and higher total DM yield for animal feeding, moringa should be harvested at wider harvesting intervals of at least 6th- to 8th-week intervals. Similarly, for pigeon peas, 4- to 6-week harvesting interval can result in optimum forage as well as feed quality and resulted in better growth performances for Somali short-eared goat breeds.展开更多
In this paper, we consider the fear effect and gestation delay, and then establish a delayed predator-prey model with cannibalism. Firstly, we prove the well-posedness of the model. Secondly, the existence and stabili...In this paper, we consider the fear effect and gestation delay, and then establish a delayed predator-prey model with cannibalism. Firstly, we prove the well-posedness of the model. Secondly, the existence and stability of all equilibriums of the system are studied. Thirdly, the Hopf bifurcation at the coexistence equilibrium is investigated, and the conditions for the occurrence of Hopf bifurcation at the unique positive equilibrium point of the system with delay are determined. Finally, the numerical simulation results show that as the time delay increases, the equilibrium loses its stability, and the system has periodic solution.展开更多
BACKGROUND Emotional reactions,such as anxiety,irritability,and aggressive behavior,have attracted clinical attention as behavioral and emotional problems in preschool-age children.AIM To investigate the current statu...BACKGROUND Emotional reactions,such as anxiety,irritability,and aggressive behavior,have attracted clinical attention as behavioral and emotional problems in preschool-age children.AIM To investigate the current status of family rearing,parental stress,and behavioral and emotional problems of preschool children and to analyze the mediating effect of the current status of family rearing on parental stress and behavioral/emo-tional problems.METHODS We use convenience sampling to select 258 preschool children in the physical examination center of our hospital from October 2021 to September 2023.The children and their parents were evaluated using a questionnaire survey.Pearson's correlation was used to analyze the correlation between child behavioral and emotional problems and parental stress and family rearing,and the structural equation model was constructed to test the mediating effect.RESULTS The score for behavioral/emotional problems of 258 preschool children was(27.54±3.63),the score for parental stress was(87.64±11.34),and the score for parental family rearing was(31.54±5.24).There was a positive correlation between the behavioral and emotional problems of the children and the“hostile/mandatory”parenting style;meanwhile,showed a negative correlation with the“support/participation”parenting style(all P<0.05).The intermediary effect value between the family upbringing of parents in parental stress and children's behavior problems was 29.89%.CONCLUSION Parental family upbringing has a mediating effect between parental stress and behavioral and emotional problems of children.Despite paying attention to the behavioral and emotional problems of preschool-age children,clinical medical staff should provide correct and reasonable parenting advice to their parents to promote the mental health of preschool-age children.展开更多
基金supported by the National Natural Science Foundation of China(NSFC)under Grant Nos.61925110,62004184 and 62234007the Key-Area Research and Development Program of Guangdong Province under Grant No.2020B010174002.
文摘The self-heating effect severely limits device performance and reliability.Although some studies have revealed the heat distribution ofβ-Ga_(2)O_(3) MOSFETs under biases,those devices all have small areas and have difficulty reflecting practical con-ditions.This work demonstrated a multi-fingerβ-Ga_(2)O_(3) MOSFET with a maximum drain current of 0.5 A.Electrical characteris-tics were measured,and the heat dissipation of the device was investigated through infrared images.The relationship between device temperature and time/bias is analyzed.
基金Project supported by the National Defense Foundation of China (Grant No 51327010101)the National Natural Science Foundation of China (Grant No 60606022)
文摘A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I - V curves with the self-heating effect is obtained.
文摘Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves shown.We establish the effective thermal transient response model with stage superposition corresponding to the heating process.The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage.In the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of workload.As the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed.
基金supported by National Natural Science Foundation of China (No.10905044)
文摘For exploiting advantages of electron beam air plasma in some unusual applications, a Monte Carlo （MC） model coupled with heat transfer model is established to simulate the characteristics of electron beam air plasma by considering the self-heating effect. Based on the model, the electron beam induced temperature field and the related plasma properties are investigated. The results indicate that a nonuniform temperature field is formed in the electron beam plasma region and the average temperature is of the order of 600 K. Moreover, much larger volume pear-shaped electron beam plasma is produced in hot state rather than in cold state. The beam ranges can, with beam energies of 75 keV and 80 keV, exceed 1.0 m and 1.2 m in air at pressure of 100 torr, respectively. Finally, a well verified formula is obtained for calculating the range of high energy electron beam in atmosphere.
基金Project supported by the National Natural Science Foundation of China (Grant No 60606022)the State Key Development Program for Basic Research of China (Grant No 51327010101)Xi’an Applied Materials Innovation Fund,China (Grant No XA-AM-200702)
文摘A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region I - V model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physicalbased simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.
基金Supported by the Special Funds for Major State Basic Research Projects(NO.G20000365)and the National Natural Science Foundation of China(No.90101012)
文摘An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current levels. In this paper a novel solution to reduce the self-heating effect is proposed, based on N+ and O+ co-implantation into silicon wafer to form a new buried layer structure. This new structure was simulated using Medici program, and the temperature distribution and output characteristics were compared with those of the conventional SOI counterparts. As expected, a reduction of self-heating effect in the novel SOI device was observed.
基金Supported by the Special Funds for Major State Basic Research Projects (No.G2000036506)the National Natural Science Foundation of China (No. 60476006)
文摘Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m ? 1·K? 1 versus 1.4 W·m? 1·K? 1). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electri-cal characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the appli-cations of SOI to high temperature conditions.
基金supported by the National Key Technology Research and Development Program of China(No.2016YFA0202101)the National Natural Science Foundation of China(Nos.61421005,61604005)+1 种基金the National High-Tech R&D Program(863 Program)(No.2015AA016501)The simulation was carried out at National Supercomputer Center in Tianjin,with Tian He-1(A)
文摘We use an electro-thermal coupled Monte Carlo simulation framework to investigate the self-heating effect（SHE） in 14 nm bulk n Fin FETs with ambient temperature（TA） from 220 to 400 K. Based on this method, nonlocal heat generation can be achieved. Contact thermal resistances of Si/Metal and Si/Si O_2 are selected to ensure that the source and drain heat dissipation paths are the first two heat dissipation paths. The results are listed below：（i） not all input power（Q_（input） turns into heat generation in the device region and some is taken out by the thermal non-equilibrium carriers, owing to the serious non-equilibrium transport;（ii） a higher TA leads to a larger ratio of input power turning into heat generation in the device region at the same operating voltages;（iii） SHE can lead to serious degradation in the carrier transport, which will increase when TA increases;（iv） the current degradation can be 8.9% when Vds = 0.7 V, Vgs = 1 V and TA = 400 K;（v） device thermal resistance（Rth） increases with increasing of TA, which is seriously impacted by the non-equilibrium transport. Hence, the impact of TA should be carefully considered when investigating SHE in nanoscale devices.
基金Project supported by the National Natural Science Foundation of China(Nos.60976068,60936005)the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083)the Specialized Research Fund for the Doctoral Program of Higher Education,China(No.200807010010)
文摘To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step buried oxide（BOX） SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently.
基金supported by the National Natural Science Foundation of China(No.60606006)the Key Science&Technology Special Project of Shaanxi Province,China(No.2011KTCQ01-19)the National Defense Pre-Research Foundation of China(No.9140A23060111)
文摘Considering the self-heating effect, an accurate expression for the global interconnection resistance per unit length in terms of interconnection wire width and spacing is presented. Based on the proposed resistance model and according to the trade-off theory, a novel optimization analytical model of delay, power dissipation and bandwidth is derived. The proposed optimal model is verified and compared based on 90 nm, 65 nm and 40 nm CMOS technologies. It can be found that more optimum results can be easily obtained by the proposed model. This optimization model is more accurate and realistic than the conventional optimization models, and can be integrated into the global interconnection design ofnano-scale integrated circuits.
文摘An analytical DC model accounting for the self-heating effect of polycrystalline silicon thin-film transistors（poly-Si TFTs） is presented.In deriving the model for the self-heating effect, the temperature dependence of the effective mobility is studied in detail.Based on the mobility model and a first order approximation, a closed-form analytical drain current model considering the self-heating effect is derived.Compared with the available experimental data, the proposed model, which includes the self-heating and kink effects, provides an accurate description of the output characteristics over the linear, the saturation, and the kink regimes.
基金supported by the Shenzhen Science and Technology Program(JCYJ20230808105111022,JCYJ20220818095806013)Natural Science Foundation of Guangdong(2023A1515012267)+1 种基金the National Natural Science Foundation of China(22178223)the Royal Society/NSFC cost share program(IEC\NSFC\223372).
文摘Low-electrode capacitive deionization(FCDI)is an emerging desalination technology with great potential for removal and/or recycling ions from a range of waters.However,it still suffers from inefficient charge transfer and ion transport kinetics due to weak turbulence and low electric intensity in flow electrodes,both restricted by the current collectors.Herein,a new tip-array current collector(designated as T-CC)was developed to replace the conventional planar current collectors,which intensifies both the charge transfer and ion transport significantly.The effects of tip arrays on flow and electric fields were studied by both computational simulations and electrochemical impedance spectroscopy,which revealed the reduction of ion transport barrier,charge transport barrier and internal resistance.With the voltage increased from 1.0 to 1.5 and 2.0 V,the T-CC-based FCDI system(T-FCDI)exhibited average salt removal rates(ASRR)of 0.18,0.50,and 0.89μmol cm^(-2) min^(-1),respectively,which are 1.82,2.65,and 2.48 folds higher than that of the conventional serpentine current collectors,and 1.48,1.67,and 1.49 folds higher than that of the planar current collectors.Meanwhile,with the solid content in flow electrodes increased from 1 to 5 wt%,the ASRR for T-FCDI increased from 0.29 to 0.50μmol cm^(-2) min^(-1),which are 1.70 and 1.67 folds higher than that of the planar current collectors.Additionally,a salt removal efficiency of 99.89%was achieved with T-FCDI and the charge efficiency remained above 95%after 24 h of operation,thus showing its superior long-term stability.
文摘Excellent progress has been made in the last few decades in the cure rates of pediatric malignancies,with more than 80%of children with cancer who have access to contemporary treatment being cured.However,the therapies responsible for this survival can also produce adverse physical and psychological long-term outcomes,referred to as late effects,which appear months to years after the completion of cancer treatment.Research has shown that 60%to 90%of childhood cancer survivors(CCSs)develop one or more chronic health conditions,and 20%to 80%of survivors experience severe or life-threatening complications during adulthood.Therefore,understanding the late side effects of such treatments is important to improve the health and quality of life of the growing population of CCSs.
基金supported by the National Key R&D Program of China(No.2017YFB0304402)。
文摘The microstructural evolution of a cold-rolled and intercritical annealed medium-Mn steel(Fe-0.10C-5Mn)was investigated during uniaxial tensile testing.In-situ observations under scanning electron microscopy,transmission electron microscopy,and X-ray diffraction analysis were conducted to characterize the progressive transformation-induced plasticity process and associated fracture initiation mechanisms.These findings were discussed with the local strain measurements via digital image correlation.The results indicated that Lüders band formation in the steel was limited to 1.5%strain,which was mainly due to the early-stage martensitic phase transformation of a very small amount of the less stable large-sized retained austenite(RA),which led to localized stress concentrations and strain hardening and further retardation of yielding.The small-sized RA exhibited high stability and progressively transformed into martensite and contributed to a stably extended Portevin-Le Chatelier effect.The volume fraction of RA gradually decreased from 26.8%to 8.2%prior to fracture.In the late deformation stage,fracture initiation primarily occurred at the austenite/martensite and ferrite/martensite interfaces and the ferrite phase.
基金supported by the National Key Research and Development Program of China(No.2022YFB3604500,No.2022YFB3604501)the National Natural Science Foundation of China(No.52172141)the Technology Development Project of Shanxi-Zheda Institude of Advanced Materials and Chemical Engineering(No.2022SX-TD017).
文摘van der Waals(vdW)heterostructures constructed by lowdimensional(0D,1D,and 2D)materials are emerging as one of the most appealing systems in next-generation flexible photodetection.Currently,hand-stacked vdW-type photodetectors are not compatible with large-areaarray fabrication and show unimpressive performance in self-powered mode.Herein,vertical 1D GaN nanorods arrays(NRAs)/2D MoS_(2)/PEDOT:PSS in wafer scale have been proposed for self-powered flexible photodetectors arrays firstly.The as-integrated device without external bias under weak UV illumination exhibits a competitive responsivity of 1.47 A W^(−1)and a high detectivity of 1.2×10^(11)Jones,as well as a fast response speed of 54/71μs,thanks to the strong light absorption of GaN NRAs and the efficient photogenerated carrier separation in type-II heterojunction.Notably,the strain-tunable photodetection performances of device have been demonstrated.Impressively,the device at−0.78%strain and zero bias reveals a significantly enhanced photoresponse with a responsivity of 2.47 A W^(−1),a detectivity of 2.6×10^(11)Jones,and response times of 40/45μs,which are superior to the state-of-the-art self-powered flexible photodetectors.This work presents a valuable avenue to prepare tunable vdWs heterostructures for self-powered flexible photodetection,which performs well in flexible sensors.
文摘The highly selective catalytic hydrogenation of halogenated nitroaromatics was achieved by employing Pd‑based catalysts that were co‑modified with organic and inorganic ligands.It was demonstrated that the catalysts contained Pd species in mixed valence states,with high valence Pd at the metal‑support interface and zero valence Pd at the metal surface.While the strong coordination of triphenylphosphine(PPh3)to Pd0 on the Pd surface prevents the adsorption of halogenated nitroaromatics and thus dehalogenation,the coordination of sodium metavanadate(NaVO3)to high‑valence Pd sites at the interface helps to activate H2 in a heterolytic pathway for the selective hydrogenation of nitro‑groups.The excellent catalytic performance of the interfacial active sites enables the selective hydrogenation of a wide range of halogenated nitroaromatics.
基金funded by the Science Committee of the Ministry of Science and Higher Education of the Republic of Kazakhstan(Grant No.AP19680589).
文摘Using the software ANSYS-19.2/Explicit Dynamics,this study performedfinite-element modeling of the large-diameter steel pipeline cross-section for the Beineu-Bozoy-Shymkent gas pipeline with a non-through straight crack,strengthened by steel wire wrapping.The effects of the thread tensile force of the steel winding in the form of single rings at the crack edges and the wires with different winding diameters and pitches were also studied.The results showed that the strengthening was preferably executed at a minimum value of the thread tensile force,which was 6.4%more effective than that at its maximum value.The analysis of the influence of the winding dia-meters showed that the equivalent stresses increased by 32%from the beginning of the crack growth until the wire broke.The increment in winding diameter decelerated the disclosure of the edge crack and reduced its length by 8.2%.The analysis of the influence of the winding pitch showed that decreasing the distance between the winding turns also led to a 33.6%reduction in the length of the straight crack and a 7.9%reduction in the maximum stres-ses on the strengthened pipeline cross-section.The analysis of the temperature effect on the pipeline material,within a range from-40℃ to+50℃,resulted in a crack length change of up to 5.8%.As the temperature dropped,the crack length decreased.Within such a temperature range,the maximum stresses were observed along the cen-tral area of the crack,which were equal to 413 MPa at+50℃ and 440 MPa at-40℃.The results also showed that the presence of the steel winding in the pipeline significantly reduced the length of crack propagation up to 8.4 times,depending on the temperature effect and design parameters of prestressing.This work integrated the existing methods for crack localization along steel gas pipelines.
文摘This study was conducted at Fafan Research Center, Golajo research site to evaluate the effect of Moringa stenopetala and pigeon pea leaf supplementation on growth performance of short-eared Somali goat breed. A total of fifteen yearling indigenous short-eared Somali goat breeds with an initial weight of 15.2 ± 0.30 kg were assigned to three treatment groups using completely randomized design. Pigeon pea (Pp) and Moringa stenopetala (MS) feeds were formulated using 0%, 5%, and 10% inclusion levels of MSLM and PPLM as experimental diets, respectively. The feed of the experiment was prepared in two levels (2 kg of Moringa stenopetala and 2 kg of pigeon pea) and was supplemented to experimental animals in treatments one and two, respectively. The average e initial body weight of selected male goats was 18.82 ± 0.37, 18.8 ± 0.37 and 17.8 ± 0.37 kg under treatment groups T1, T2 and control respectively. Data was analyzed using general linear model (GLM) procedure of SAS computer package Version 9.0 (SAS, 2002). The final weights gain (FWG) of goats on T1 and T2 of experimental group was significantly (P 0.05) the final weight gain of goat supplemented on Moringa stenopetala (T1) and pigeon pea levels (T2). The mean average weight gains (AWG) obtained from the supplemented group in this study were 7.50 ± 0.37 and 7.82 ± 0.37 kg for T1 and T2, whereas mean weight gains for un-supplemented goats were found to be 6.26 ± 0.37 kg. Feeding of dried Moringa stenopetala and pigeon pea leaves mixture improved body weights and average daily body weight gain without affecting feed intake and overall health of Somali goat breed. As Moringa stenopetala and pigeon pea leaves are rich nitrogen/protein source, they can be used effectively as substitute for conventional concentrate in the diet of growing goats at small holder farmer’s level where they can be grown in abundance. Therefore, for higher quality of forage and higher total DM yield for animal feeding, moringa should be harvested at wider harvesting intervals of at least 6th- to 8th-week intervals. Similarly, for pigeon peas, 4- to 6-week harvesting interval can result in optimum forage as well as feed quality and resulted in better growth performances for Somali short-eared goat breeds.
文摘In this paper, we consider the fear effect and gestation delay, and then establish a delayed predator-prey model with cannibalism. Firstly, we prove the well-posedness of the model. Secondly, the existence and stability of all equilibriums of the system are studied. Thirdly, the Hopf bifurcation at the coexistence equilibrium is investigated, and the conditions for the occurrence of Hopf bifurcation at the unique positive equilibrium point of the system with delay are determined. Finally, the numerical simulation results show that as the time delay increases, the equilibrium loses its stability, and the system has periodic solution.
基金Supported by the Shijiazhuang Science and Technology Research and Development Program,No.221460383.
文摘BACKGROUND Emotional reactions,such as anxiety,irritability,and aggressive behavior,have attracted clinical attention as behavioral and emotional problems in preschool-age children.AIM To investigate the current status of family rearing,parental stress,and behavioral and emotional problems of preschool children and to analyze the mediating effect of the current status of family rearing on parental stress and behavioral/emo-tional problems.METHODS We use convenience sampling to select 258 preschool children in the physical examination center of our hospital from October 2021 to September 2023.The children and their parents were evaluated using a questionnaire survey.Pearson's correlation was used to analyze the correlation between child behavioral and emotional problems and parental stress and family rearing,and the structural equation model was constructed to test the mediating effect.RESULTS The score for behavioral/emotional problems of 258 preschool children was(27.54±3.63),the score for parental stress was(87.64±11.34),and the score for parental family rearing was(31.54±5.24).There was a positive correlation between the behavioral and emotional problems of the children and the“hostile/mandatory”parenting style;meanwhile,showed a negative correlation with the“support/participation”parenting style(all P<0.05).The intermediary effect value between the family upbringing of parents in parental stress and children's behavior problems was 29.89%.CONCLUSION Parental family upbringing has a mediating effect between parental stress and behavioral and emotional problems of children.Despite paying attention to the behavioral and emotional problems of preschool-age children,clinical medical staff should provide correct and reasonable parenting advice to their parents to promote the mental health of preschool-age children.
