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Solute atom segregation to I1 stacking fault and its bounding partial dislocations in a Mg–Bi alloy
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作者 Cong He Yong Zhang +2 位作者 Zhiqiao Li Houwen Chen Jian-Feng Nie 《Journal of Magnesium and Alloys》 SCIE EI CAS CSCD 2024年第8期3135-3141,共7页
Stacking faults(SFs)and the interaction between solute atoms and SFs in a Mg–Bi alloy are investigated using aberration-corrected scanning transmission electron microscopy.It is found that abundant I_(1)SFs are gener... Stacking faults(SFs)and the interaction between solute atoms and SFs in a Mg–Bi alloy are investigated using aberration-corrected scanning transmission electron microscopy.It is found that abundant I_(1)SFs are generated after cold rolling and are mainly distributed inside{1012}twins.After aging treatment,the formation of single-layer and three-layer Bi atom segregation in the vicinity of I_(1)fault are clearly observed.Bi segregation also occurs at the 1/6<2203>bounding Frank partial dislocation cores.The segregation behaviors in I_(1)fault and Frank dislocations are discussed and rationalized using first-principles calculations. 展开更多
关键词 Mg alloys Suzuki segregation Stacking fault Frank partial dislocation
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Propagation of partially coherent beams carrying an edge dislocation through atmospheric turbulence along a slant path 被引量:1
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作者 李晋红 张洪润 吕百达 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第9期647-654,共8页
This paper derives the explicit expressions for the average intensity, beam width and angular spread of Gaussian Schell-model (GSM) beams with edge dislocation propagating through atmospheric turbulence along a slan... This paper derives the explicit expressions for the average intensity, beam width and angular spread of Gaussian Schell-model (GSM) beams with edge dislocation propagating through atmospheric turbulence along a slant path. The propagation of GSM beams with edge dislocation through horizontal atmospheric turbulence can be treated as a special case through a slant one. The propagation properties of GSM beams with edge dislocation through slant atmospheric turbulence are studied, where the influence of edge dislocation parameters including the slope p and off-axis distance d on the spreading of GSM beams with edge dislocation in atmospheric turbulence is stressed. It shows that the spreading of the intensity profile of GSM beams with edge dislocation along a slant path is smaller than that along a horizontal path in the long-distance atmospheric propagation. The larger the slope |p| and the smaller the off-axis distance |d| are, the less the beam-width spreading and angular spread of GSM beams with edge dislocation are affected by turbulence. The CSM beams with edge dislocation is less affected by turbulence than that of GSM beams without edge dislocation. The results are illustrated numerically and their validity is interpreted physically. 展开更多
关键词 partially coherent beams with edge dislocation atmospheric turbulence slant path
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Dislocation formation and twinning from the crack tip in Ni_3Al:molecular dynamics simulations 被引量:3
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作者 谢红献 王崇愚 +1 位作者 于涛 杜俊平 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第1期251-258,共8页
The mechanism of low-temperature deformation in a fracture process of Ll2 Ni3Al is studied by molecular dynamic simulations. Owing to the unstable stacking energy, the [011] superdislocation is dissociated into partia... The mechanism of low-temperature deformation in a fracture process of Ll2 Ni3Al is studied by molecular dynamic simulations. Owing to the unstable stacking energy, the [011] superdislocation is dissociated into partial dislocations separated by a stacking fault. The simulation results show that when the crack speed is larger than a critical speed, the Shockley partial dislocations will break forth from both the crack tip and the vicinity of the crack tip; subsequently the super intrinsic stacking faults are formed in adjacent {111} planes, meanwhile the super extrinsic stacking faults and twinning also occur. Our simulation results suggest that at low temperatures the ductile fracture in Ll2 Ni3Al is accompanied by twinning, which is produced by super-intrinsic stacking faults formed in adjacent {111} planes. 展开更多
关键词 molecular dynamic CRACK Shockley partial dislocation stacking fault
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Molecular dynamics study on the effect of temperature on HCP→FCC phase transition of magnesium alloy 被引量:2
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作者 Chun Xue Shuai Li +4 位作者 Zhibing Chu Qianhua Yang Yugui Li Lifeng Ma Leifeng Tuo 《Journal of Magnesium and Alloys》 SCIE EI CAS CSCD 2023年第10期3749-3764,共16页
To explore the effect of temperature on the phase transformation of HCP→FCC during compression, the uniaxial compression process of AZ31 magnesium alloy was simulated by the molecular dynamics method, and the changes... To explore the effect of temperature on the phase transformation of HCP→FCC during compression, the uniaxial compression process of AZ31 magnesium alloy was simulated by the molecular dynamics method, and the changes of crystal structure and dislocation evolution were observed. The effects of temperature on mechanical properties, crystal structure, and dislocation evolution of magnesium alloy during compression were analyzed. It is concluded that some of the Shockley partial dislocation is related to FCC stacking faults. With the help of TEM characterization, the correctness of the correlation between some of the dislocations and FCC stacking faults is verified. Through the combination of simulation and experiment, this paper provides an idea for the in-depth study of the solid-phase transformation of magnesium alloys and provides reference and guidance for the design of magnesium alloys with good plasticity and formability at room temperature. 展开更多
关键词 Temperature AZ31 magnesium alloy FCC stacking fault Shockley partial dislocation Phase transformation
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Precipitation on stacking faults in Mg–9.8wt%Sn alloy 被引量:3
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作者 C.Q.Liu C.He +1 位作者 H.W.Chen J.F.Nie 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2020年第10期230-240,共11页
In this work,we have systematically investigated precipitation ofβ’-Mg3Sn phase on intrinsic stacking faults I1 and I2 in a Mg-9.8 wt%Sn alloy using aberration-corrected scanning transmission electron microscopy.All... In this work,we have systematically investigated precipitation ofβ’-Mg3Sn phase on intrinsic stacking faults I1 and I2 in a Mg-9.8 wt%Sn alloy using aberration-corrected scanning transmission electron microscopy.All observed I1 faults are generated by the dissociation of c+a perfect dislocations and bounded by Frank partial dislocations having a Shockley component.Precipitation ofβ’on I1 involves a shear of 1/3<0110>α,similar to its formation directly from theα-Mg matrix.Theβ’phase often nucleates at one end of an I1 fault due to the interaction between shear strain fields ofβ’and the Shockley component of the Frank partial at that end,and subsequently grows towards the other end of the fault.When theβ’reaches to the other end,the Shockley partial bounding the lengthening end of theβ’reacts with the Frank partial bounding the fault,generating an a perfect dislocation that can glide away from the precipitate and the fault.The observed I2 faults are generated by the dissociation of a perfect dislocations and bounded by Shockley partials.Precipitation ofβ’on I2 does not need a shear of 1/3<01-10>α,since the pre-existing I2 fault already provides an ABCA four-layer structure ofβ’.Thickening of theβ’that has already formed on the I2 involves the successive occurrence of three crystallographically equivalent shears of 1/3<01-10>αon every second(0002)αplane of theα-Mg matrix.Although this thickening mechanism is similar to that of theβ’formed directly from theα-Mg matrix,an a perfect dislocation will be produced when theβ’is thickened to eight layers,and it can again glide away from the precipitate and the fault. 展开更多
关键词 Heterogeneous precipitation HAADF-STEM Shockley partial dislocation Frank partial dislocation dislocation reaction
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Different structural origins for different sized surface pits observed on a-plane GaN film 被引量:1
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作者 GAO ZhiYuan LI JiangJiang +3 位作者 XUE XiaoWei CUI BiFeng XING YanHui ZOU DeShu 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2016年第1期156-161,共6页
A correlation study between the observed surface morphology using high-resolution scanning electron microscopy(HRSEM) and the observed structural imperfections using transmission electron microscopy(TEM) has been cond... A correlation study between the observed surface morphology using high-resolution scanning electron microscopy(HRSEM) and the observed structural imperfections using transmission electron microscopy(TEM) has been conducted for a-plane Ga N. There are three different sized asymmetric surface pits: large pit of 500 nm–2 ?m in side length, medium pit of 50 nm in side length, and small pit with side lengths of less than 5 nm, which originate from incomplete island coalescence, screw dislocation, and partial dislocation(PD), respectively. Both screw dislocation and PD can produce pits on the free surface because they have a perpendicular line tension to the surface, which must remain in balance with the surface tension. The two types of dislocation lead to distinctive pit sizes because the PD has a smaller Burgers vector component along the dislocation line than the pure screw dislocation. A pit that is produced in the island-coalescing process is much larger than those caused by dislocations because island coalescence is a kinetic process that involves large-scale mass transportation, whereas the dislocation mediates the surface in the local area. These three types of surface pits sometimes interact with one another in space. The coalescence of the island determines the surface morphology at large scales, whereas the defects affect the details. 展开更多
关键词 surface pits nonpolar Ga N screw dislocations partial dislocations Island coalescence
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