The lateraI incorporation of graphene and hexagonal boron nitride(h-BN)onto a substrate surface creates irvplane h-BN/graphene heterostructures,which have promising applications in novel two-dimensional electronic and...The lateraI incorporation of graphene and hexagonal boron nitride(h-BN)onto a substrate surface creates irvplane h-BN/graphene heterostructures,which have promising applications in novel two-dimensional electronic and photoelectronic devices.The quality of h-BN/graphene domain boundaries depends on their orientation,which is crucial for device performances.Here,the heteroepitaxial growth of graphene along the edges of h-BN domains on Ni(111)surfaces as well as the growth dynamics of h-BN using chemical vapor deposit!on(CVD)are in situ investigated by surface imaging measurements.The nucieating seed effect of h-BN has been revealed,which con tributes to the single orie ntation of heterostructures with epitaxial stitch i ng.Further,the growth of h-BN prior to that of graphene is essential to obtain high-quality in-plane h-BN/graphene heterostructures on Ni(111).The“compact to fractal”shape transition of h-BN domains appears with the increasing surface concentration of the growth blocks,suggesting that the dynamic growth mechanism follows diffusion-limited aggregation(DLA)but not reaction・limited aggregation(RLA).Our results provide in sights into the syn thesis of well-defi ned h-BN/graphene heterostructures and deep un derstanding of the growth dynamics of h-BN on metal surfaces.展开更多
基金the National Natural Science Foundation of China(No.21872169)Natural Science Foundation of Jiangsu Province(No.BK20170426)
文摘The lateraI incorporation of graphene and hexagonal boron nitride(h-BN)onto a substrate surface creates irvplane h-BN/graphene heterostructures,which have promising applications in novel two-dimensional electronic and photoelectronic devices.The quality of h-BN/graphene domain boundaries depends on their orientation,which is crucial for device performances.Here,the heteroepitaxial growth of graphene along the edges of h-BN domains on Ni(111)surfaces as well as the growth dynamics of h-BN using chemical vapor deposit!on(CVD)are in situ investigated by surface imaging measurements.The nucieating seed effect of h-BN has been revealed,which con tributes to the single orie ntation of heterostructures with epitaxial stitch i ng.Further,the growth of h-BN prior to that of graphene is essential to obtain high-quality in-plane h-BN/graphene heterostructures on Ni(111).The“compact to fractal”shape transition of h-BN domains appears with the increasing surface concentration of the growth blocks,suggesting that the dynamic growth mechanism follows diffusion-limited aggregation(DLA)but not reaction・limited aggregation(RLA).Our results provide in sights into the syn thesis of well-defi ned h-BN/graphene heterostructures and deep un derstanding of the growth dynamics of h-BN on metal surfaces.
