Anodic bonding between silicon and glass with dou bl e electric fields is presented.By this means,the damage caused by the electric f ield to the movable part during bonding can be avoided and the experiment result s ...Anodic bonding between silicon and glass with dou bl e electric fields is presented.By this means,the damage caused by the electric f ield to the movable part during bonding can be avoided and the experiment result s show that.展开更多
Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate...Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate is incorporated into the thin film,forming Ti-Al-O compounds.While the irradiated region becomes transparent,the bond quality was evaluated by scanning acoustic microscopy.展开更多
文摘Anodic bonding between silicon and glass with dou bl e electric fields is presented.By this means,the damage caused by the electric f ield to the movable part during bonding can be avoided and the experiment result s show that.
基金financial support of FhG Internal Programs(Grant No.692 280)
文摘Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate is incorporated into the thin film,forming Ti-Al-O compounds.While the irradiated region becomes transparent,the bond quality was evaluated by scanning acoustic microscopy.
