Ultraviolet radiation-B (UVBR) affects plants in many important ways, including reduced growth rate, reduction of primary productivity and changes in ultrastructure. The rice (Oryza sativa) is one of the most cultivat...Ultraviolet radiation-B (UVBR) affects plants in many important ways, including reduced growth rate, reduction of primary productivity and changes in ultrastructure. The rice (Oryza sativa) is one of the most cultivated cereal in the world along with corn and wheat, representing over 50% of agricultural production. In this study, we examined O. sativa exposed to natural radiation denominated which “ambient samples”, plants cultivated which photosynthetically active radiation (PAR), denominated with PAR-only and plants cultivated with PAR + UVBR for 2 h per day during 30 days of cultivation in vitro. The samples were processed for electron microscopy and histochemistry analysis. PAR + UVBR caused changes in the ultrastructure of leaf of O. sativa, mesophyll cells, which included increased thickness of the cell wall and plastoglobuli, reduced intracellular spaces, changes in the cell contour, and destruction of chloroplast and mitochondria internal organization. The exposure to PAR + UVBR led to changes in guard and subsidiary cells, and the stomata and papillae were with irregular shape. The reduction of epicuticular wax that covered the leaf, was observed. Taken together, these ?ndings strongly suggested that PAR + UVBR negatively affects the ultrastructure and morphology and growth rates, of leaf of O. sativa and, in the long term, their economic viability.展开更多
This paper describes what is thought to be the first generation of a continuous wave deep ultraviolet laser at 275 nm by efficient frequency doubling of a blue-diode-pumped Pr:YLF laser at 550 nm.By employing a novel ...This paper describes what is thought to be the first generation of a continuous wave deep ultraviolet laser at 275 nm by efficient frequency doubling of a blue-diode-pumped Pr:YLF laser at 550 nm.By employing a novel fast-axis collimated blue semiconductor laser as the pump source,combined with a folded cavity and innovation coating technology,and utilizing a Brewster-cut BBO crystal for intracavity frequency doubling,TEM00 mode deep UV laser radiation at 275 nm with an output power of 351 mW is obtained.This marks the first report of achieving 275 nm laser generation based on Pr:LiYF4 to date.展开更多
Wide bandgap semiconductors are ideal materials for ultraviolet(UV)photodetectors due to their stable optoelectronic properties and high efficient UV light absorption.However,photodetectors based on pure wide bandgap ...Wide bandgap semiconductors are ideal materials for ultraviolet(UV)photodetectors due to their stable optoelectronic properties and high efficient UV light absorption.However,photodetectors based on pure wide bandgap semiconductors typically have large dark current that inhibit the devices from generating high UV photoresponse.Herein,a high-voltage-resistant wafer-scale 4H-SiC UV photodetector enabled by electric field distribution modulation is proposed.As the P+region introduced by the ion implantation process affects the electric field distribution and suppresses the Schottky barrier lowering effect,the dark current of the device reaches pA-level,and remains nA-level at a bias voltage of 1 kV.Meanwhile,the device exhibits superior photoresponse,including a prominent responsivity of 105.7 A/W,a remarkable detectivity of 1.01×10^(14) Jones,an outstanding photoconductive gain of 477,and a high light on/off ratio of 1.84×10^(5).This device provides a reliable solution for high-performance UV photodetectors that require high-voltage-resistant in special areas,and the wafer-scale fabrication process makes it feasible for practical applications.展开更多
[Objectives] To identify Pyrostegia venusta (Ker-Gawler.) Miers by microscope and ultraviolet spectrum. [Methods] The paraffin section, slide section and freehand section were used to make the cross section of the ste...[Objectives] To identify Pyrostegia venusta (Ker-Gawler.) Miers by microscope and ultraviolet spectrum. [Methods] The paraffin section, slide section and freehand section were used to make the cross section of the stem and leaf, and the surface of the leaf and the powder of the root, stem and leaf were made by the conventional method, which were observed under the optical microscope. Ultraviolet-visible spectrum identification was carried out according to a conventional method. [Results] The microscopic identification and ultraviolet-visible absorption characteristics of P. venusta (Ker-Gawler) Miers were described in detail. [Conclusions] This study is expected to provide a reference for the identification of P. venusta(KerGawler)Miers and the establishment of the related quality standard.展开更多
Dielectric metasurfaces,composed of planar arrays of subwavelength dielectric structures that collectively mimic the operation of conventional bulk optical elements,have revolutionized the field of optics by their pot...Dielectric metasurfaces,composed of planar arrays of subwavelength dielectric structures that collectively mimic the operation of conventional bulk optical elements,have revolutionized the field of optics by their potential in constructing high-efficiency and multi-functional optoelectronic systems on chip.The performance of a dielectric metasurface is largely determined by its constituent material,which is highly desired to have a high refractive index,low optical loss and wide bandgap,and at the same time,be fabrication friendly.Here,we present a new material platform based on tantalum pentoxide(Ta2O5)for implementing high-performance dielectric metasurface optics over the ultraviolet and visible spectral region.This wide-bandgap dielectric,exhibiting a high refractive index exceeding 2.1 and negligible extinction coefficient across a broad spectrum,can be easily deposited over large areas with good quality using straightforward physical vapor deposition,and patterned into high-aspect-ratio subwavelength nanostructures through commonly-available fluorine-gas-based reactive ion etching.We implement a series of highefficiency ultraviolet and visible metasurfaces with representative light-field modulation functionalities including polarization-independent high-numerical-aperture lensing,spin-selective hologram projection,and vivid structural color generation,and the devices exhibit operational efficiencies up to 80%.Our work overcomes limitations faced by scalability of commonly-employed metasurface dielectrics and their operation into the visible and ultraviolet spectral range,and provides a novel route towards realization of high-performance,robust and foundry-manufacturable metasurface optics.展开更多
240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge ef...240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.展开更多
Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ...Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p-type(Sb-doped ZnO, ZnO:Sb) and n-type(Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed.展开更多
Polymer dielectrics capable of operating efficiently at high electric fields and elevated temperatures are urgently demanded by next-generation electronics and electrical power systems.While inorganic fillers have bee...Polymer dielectrics capable of operating efficiently at high electric fields and elevated temperatures are urgently demanded by next-generation electronics and electrical power systems.While inorganic fillers have been extensively utilized to improved high-temperature capacitive performance of dielectric polymers,the presence of thermodynamically incompatible organic and inorganic components may lead to concern about the long-term stability and also complicate film processing.Herein,zero-dimensional polymer dots with high electron affinity are introduced into photoactive allyl-containing poly(aryl ether sulfone)to form the all-organic polymer composites for hightemperature capacitive energy storage.Upon ultraviolet irradiation,the crosslinked polymer composites with polymer dots are efficient in suppressing electrical conduction at high electric fields and elevated temperatures,which significantly reduces the high-field energy loss of the composites at 200℃.Accordingly,the ultraviolet-irradiated composite film exhibits a discharged energy density of 4.2 J cm^(−3)at 200℃.Along with outstanding cyclic stability of capacitive performance at 200℃,this work provides a promising class of dielectric materials for robust high-performance all-organic dielectric nanocomposites.展开更多
High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were ...High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.展开更多
Extensive research has been conducted on visible-light and longer-wavelength infrared-light storage phosphors,which are utilized as promising rewritable memory media for optical information storage applications in dar...Extensive research has been conducted on visible-light and longer-wavelength infrared-light storage phosphors,which are utilized as promising rewritable memory media for optical information storage applications in dark environments.However,storage phosphors emitting in the deep ultraviolet spectral region(200–300 nm)are relatively lacking.Here,we report an appealing deep-trap ultraviolet storage phosphor,ScBO_(3):Bi^(3+),which exhibits an ultranarrowband light emission centered at 299 nm with a full width at half maximum(FWHM)of 0.21 eV and excellent X-ray energy storage capabilities.When persistently stimulated by longer-wavelength white/NIR light or heated at elevated temperatures,ScBO_(3):Bi^(3+)phosphor exhibits intense and long-lasting ultraviolet luminescence due to the interplay between defect levels and external stimulus,while the natural decay in the dark at room temperature is extremely weak after X-ray irradiation.The impact of the spectral distribution and illuminance of ambient light and ambient temperature on ultraviolet light emission has been studied by comprehensive experimental and theoretical investigations,which elucidate that both O vacancy and Sc interstitial serve as deep electron traps for enhanced and prolonged ultraviolet luminescence upon continuous optical or thermal stimulation.Based on the unique spectral features and trap distribution in ScBO_(3):Bi^(3+)phosphor,controllable optical information read-out is demonstrated via external light or heat manipulation,highlighting the great potential of ScBO_(3):Bi^(3+)phosphor for advanced optical storage application in bright environments.展开更多
In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona dischar...In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.展开更多
Ultraviolet radiation by its wavelength is divided into: UVA, UVB and UVC. Only UVA and UVB manage to penetrate the ozone layer, but due to anthropological activities, all of them are capable of interacting with human...Ultraviolet radiation by its wavelength is divided into: UVA, UVB and UVC. Only UVA and UVB manage to penetrate the ozone layer, but due to anthropological activities, all of them are capable of interacting with humans to a greater or lesser extent, and can generate adverse effects such as cellular stress when interacting with intra-and extracellular biomolecules. The skin is the first organ in contact with UV radiation, and the stress it generates can be analyzed by the expression of a bioindicator of cellular damage such as Hsp70. Therefore, the objective of the project was: to determine the effect of UVA, UVB and UVC radiation on HaCaT epithelial cells, by analyzing the expression of Hsp70. Materials and methods: HaCaT cells were cultured in vitro, which were irradiated with UVA, UVB and UVC light at different doses, to subsequently determine the degree of Hsp70 expression by Immunodetection by PAGE-SDS and Western Blot. Results: Basal expression of Hsp70 was observed in no irradiated HaCaT cells. When HaCaT cells were irradiated with UVA, UVB, UVC, an increase in this Hsp70 protein was observed. With UVA, a higher degree of expression was observed at a time of 30 minutes of irradiation. With UVB the highest expression shifted to a time of 20 minutes. With UVC, overexpression was observed after 10 minutes. Conclusion: UV radiation generates cellular stress on HaCaT cells, evaluated by the stress bioindicator Hsp70. According to the wavelength of UV radiation, those that have a shorter wavelength have a greater potential for cellular damage, such as UVC.展开更多
Liquid-phase exfoliation was employed to synthesize Sr_(2)Nb_(3)O_(10) perovskite nanosheets with thicknesses down to 1.76 nm.Transmission electron microscopy(TEM),atomic force microscope(AFM),X-ray photoelectron spec...Liquid-phase exfoliation was employed to synthesize Sr_(2)Nb_(3)O_(10) perovskite nanosheets with thicknesses down to 1.76 nm.Transmission electron microscopy(TEM),atomic force microscope(AFM),X-ray photoelectron spectrometer(XPS),and other characterization techniques were used to evaluate the atomic structure and chemical composition of the exfoliated nanosheets.A UV photodetector based on individual Sr_(2)Nb_(3)O_(10) nanosheets was prepared to demonstrate the application of an ultraviolet(UV) photodetector.The UV photodetector exhibited outstanding photocurrent and responsivity with a responsivity of 3×10^(5) A·W^(-1) at 5 V bias under 280 nm illumination,a photocurrent of 60 nA,and an on/off ratio of 3×10^(2).展开更多
A vacuum ultraviolet(VUV)spectroscopy with a focal length of 1 m has been engineered specifically for observing edge impurity emissions in Experimental Advanced Superconducting Tokamak(EAST).In this study,wavelength c...A vacuum ultraviolet(VUV)spectroscopy with a focal length of 1 m has been engineered specifically for observing edge impurity emissions in Experimental Advanced Superconducting Tokamak(EAST).In this study,wavelength calibration for the VUV spectroscopy is achieved utilizing a zinc lamp.The grating angle and charge-coupled device(CCD)position are carefully calibrated for different wavelength positions.The wavelength calibration of the VUV spectroscopy is crucial for improving the accuracy of impurity spectral data,and is required to identify more impurity spectral lines for impurity transport research.Impurity spectra of EAST plasmas have also been obtained in the wavelength range of 50–300 nm with relatively high spectral resolution.It is found that the impurity emissions in the edge region are still dominated by low-Z impurities,such as carbon,oxygen,and nitrogen,albeit with the application of fulltungsten divertors on the EAST tokamak.展开更多
The effect of ultraviolet(UV)radiation and biocide benzalkonium chloride(BKC)on fungal-induced corrosion of AA7075 induced by Aspergillus terreus(A.terreus)was deeply studied using analysis of biological activity,surf...The effect of ultraviolet(UV)radiation and biocide benzalkonium chloride(BKC)on fungal-induced corrosion of AA7075 induced by Aspergillus terreus(A.terreus)was deeply studied using analysis of biological activity,surface analysis,and electrochemical measurements.Results demonstrated that the planktonic and sessile spore concentrations decline by more than two orders of magnitude when UV radiation and BKC are combinedly used compared with the control.UV radiation can inhibit the biological activity of A.terreus and influence the stability of passive film of AA7075.Except for direct disinfection,the physical adsorption of BKC on the specimen can effectively inhibit the attachment of A.terreus.The combination of UV radiation and BKC can much more effectively inhibit the corrosion of AA,especially pitting corrosion,due to their synergistic effect.The combined application of UV radiation and BKC can be a good method to effectively inhibit fungal-induced corrosion.展开更多
During wet complexation denitrification of flue gas,Fe^(Ⅱ)EDTA regeneration,also known as reducing Fe^(Ⅱ)EDTA and Fe^(Ⅱ)EDTA-nitric oxide(NO)to Fe^(Ⅱ)EDTA,is crucial.In this paper,ultraviolet(UV)light was used for...During wet complexation denitrification of flue gas,Fe^(Ⅱ)EDTA regeneration,also known as reducing Fe^(Ⅱ)EDTA and Fe^(Ⅱ)EDTA-nitric oxide(NO)to Fe^(Ⅱ)EDTA,is crucial.In this paper,ultraviolet(UV)light was used for the first time to reduce Fe^(Ⅱ)EDTA-NO.The experimental result demonstrated that Fe^(Ⅱ)EDTA-NO reduction rate increased with UV power increasing,elevated temperature,and initial Fe^(Ⅱ)EDTA-NO concentration decreasing.Fe^(Ⅱ)EDTA-NO reduction rate increased first and then decreased as pH value increased(2.0-10.0).Fe^(Ⅱ)EDTA-NO reduction with UV irradiation presented a first order reaction with respect to Fe^(Ⅱ)EDTA-NO.Compared with other Fe^(Ⅱ)EDTA regeneration methods,Fe^(Ⅱ)EDTA regeneration with UV show more superiority through comprehensive consideration of regeneration rate and procedure.Subsequently,NO absorption experiment by Fe^(Ⅱ)EDTA solution with UV irradiation confirmed that UV can significantly promote the NO removal performance of Fe^(Ⅱ)EDTA.Appropriate oxygen concentration(3%(vol))and acidic environment(pH=4)was favorable for NO removal.With UV power increasing as well as temperature decreasing,NO removal efficiency rose.In addition,the mechanism research indicates that NO from flue gas is mostly converted to NO_(2)-,NO_(3)-,NH_(4)^(+),N_(2),and N_(2)O with Fe^(Ⅱ)EDTA absorption liquid with UV irradiation.UV strengthens NO removal in Fe^(Ⅱ)EDTA absorption liquid by forming a synergistic effect of oxidation-reduction-complexation.Finally,compared with NO removal methods with Fe^(Ⅱ)EDTA,Fe^(Ⅱ)EDTA combined UV system shows prominent technology advantage in terms of economy and secondary pollution.展开更多
In high harmonic generation(HHG),Laguerre–Gaussian(LG) beams are used to generate extreme ultraviolet(XUV)vortices with well-defined orbital angular momentum(OAM),which have potential applications in fields such as m...In high harmonic generation(HHG),Laguerre–Gaussian(LG) beams are used to generate extreme ultraviolet(XUV)vortices with well-defined orbital angular momentum(OAM),which have potential applications in fields such as microscopy and spectroscopy.An experimental study on the HHG driven by vortex and Gaussian beams is conducted in this work.It is found that the intensity of vortex harmonics is positively correlated with the laser energy and gas pressure.The structure and intensity distribution of the vortex harmonics exhibit significant dependence on the relative position between the gas jet and the laser focus.The ring-like structures observed in the vortex harmonics,and the interference of quantum paths provide an explanation for the distinct structural characteristics.Moreover,by adjusting the relative position between the jet and laser focus,it is possible to discern the contributions from different quantum paths.The optimization of the HH vortex field is applicable to the XUV,which opens up a new way for exploiting the potential in optical spin or manipulating electrons by using the photon with tunable orbital angular momentum.展开更多
I reminisce on my early life in Section 1;on my education in Sections 2 and 3;on the years at Princeton as a research astronomer in Section 4;on the years on the faculty at Chicago in Section 5;on research on Diffuse ...I reminisce on my early life in Section 1;on my education in Sections 2 and 3;on the years at Princeton as a research astronomer in Section 4;on the years on the faculty at Chicago in Section 5;on research on Diffuse Interstellar Bands(DIBs) in Section 6;on construction of the 3.5 m telescope at Apache Point Observatory(APO)in Section 7;on work on the Sloan Digital Sky Survey(SDSS) in Section 8;on work in public education in Chicago in Section 9;and on my travels in Section 10. My main science research is of an observational nature,concerning Galactic and intergalactic interstellar gas. Highlights for me included my work on the orbiting telescope Copernicus, including the discovery of interstellar deuterium;early observations of absorption associated with fivetimes ionized oxygen;and discoveries concerning the phases of gas in the local interstellar medium, based on previously unobservable interstellar UV spectral lines. With other instruments and collaborations, I extended interstellar UV studies to the intergalactic cool gas using quasi-stellar object QSO absorption lines redshifted to the optical part of the spectrum;provided a better definition of the emission and morphological character of the source of absorption lines in QSO spectra;and pursued the identification of the unidentified DIBs. For several of these topics, extensive collaborations with many scientists were essential over many years. The conclusions developed slowly, as I moved from being a graduate student at Chicago, to a research scientist position at Princeton and then to a faculty position at Chicago. At each stage of life, I was exposed to new technologies adaptable to my science and to subsequent projects. From high school days, I encountered several management opportunities which were formative. I have been extremely fortunate both in scientific mentors I had and in experimental opportunities I encountered.展开更多
Wireless ultraviolet communication is a new type of communication mode. It refers to the transmission of information through the scattering of ultraviolet light by atmospheric particles and aerosol particles. The scat...Wireless ultraviolet communication is a new type of communication mode. It refers to the transmission of information through the scattering of ultraviolet light by atmospheric particles and aerosol particles. The scattering characteristics can enable the wireless ultraviolet communication system to transmit ultraviolet light signals in a non-line-of-sight manner, which overcomes the weakness that other free space optical communications must work in a line-of-sight manner. Based on the basic theory of scattering and absorption in atmospheric optics, taking the ultraviolet light with a wavelength of 266 nm as an example, this paper introduces the classical model of non-line-of-sight single-scattering coplanarity based on the ellipsoid coordinate system. The model is used to simulate and analyze the relationship between the geometric parameters such as transmission distance, transceiver elevation angle and transceiver half-angle and the received optical power per unit area. The performance of non-line-of-sight ultraviolet communication system in rain and fog environment is discussed respectively. The results show that the transmission quality of non-line-of-sight ultraviolet atmospheric propagation is greatly affected by the communication distance. As the distance increases, the received light power per unit area gradually decreases. In addition, increasing the emission elevation angle, the receiving elevation angle and the receiving half angle is an important way to improve the system performance.展开更多
A 60-mW solid-state deep ultraviolet(DUV)laser at 193 nm with narrow linewidth is obtained with two stages of sum frequency generation in LBO crystals.The pump lasers,at 258 and 1553 nm,are derived from a homemade Yb-...A 60-mW solid-state deep ultraviolet(DUV)laser at 193 nm with narrow linewidth is obtained with two stages of sum frequency generation in LBO crystals.The pump lasers,at 258 and 1553 nm,are derived from a homemade Yb-hybrid laser employing fourth-harmonic generation and Er-doped fiber laser,respectively.The Yb-hybrid laser,finally,is power scaling by a 2 mm×2 mm×30 mm Yb:YAG bulk crystal.Accompanied by the generated 220-mW DUV laser at 221 nm,the 193-nm laser delivers an average power of 60 mW with a pulse duration of 4.6 ns,a repetition rate of 6 kHz,and a linewidth of∼640 MHz.To the best of our knowledge,this is the highest power of 193-and 221-nm laser generated by an LBO crystal ever reported as well as the narrowest linewidth of 193-nm laser by it.Remarkably,the conversion efficiency reaches 27%for 221 to 193 nm and 3%for 258 to 193 nm,which are the highest efficiency values reported to date.We demonstrate the huge potential of LBO crystals for producing hundreds of milliwatt or even watt level 193-nm laser,which also paves a brand-new way to generate other DUV laser wavelengths.展开更多
文摘Ultraviolet radiation-B (UVBR) affects plants in many important ways, including reduced growth rate, reduction of primary productivity and changes in ultrastructure. The rice (Oryza sativa) is one of the most cultivated cereal in the world along with corn and wheat, representing over 50% of agricultural production. In this study, we examined O. sativa exposed to natural radiation denominated which “ambient samples”, plants cultivated which photosynthetically active radiation (PAR), denominated with PAR-only and plants cultivated with PAR + UVBR for 2 h per day during 30 days of cultivation in vitro. The samples were processed for electron microscopy and histochemistry analysis. PAR + UVBR caused changes in the ultrastructure of leaf of O. sativa, mesophyll cells, which included increased thickness of the cell wall and plastoglobuli, reduced intracellular spaces, changes in the cell contour, and destruction of chloroplast and mitochondria internal organization. The exposure to PAR + UVBR led to changes in guard and subsidiary cells, and the stomata and papillae were with irregular shape. The reduction of epicuticular wax that covered the leaf, was observed. Taken together, these ?ndings strongly suggested that PAR + UVBR negatively affects the ultrastructure and morphology and growth rates, of leaf of O. sativa and, in the long term, their economic viability.
文摘This paper describes what is thought to be the first generation of a continuous wave deep ultraviolet laser at 275 nm by efficient frequency doubling of a blue-diode-pumped Pr:YLF laser at 550 nm.By employing a novel fast-axis collimated blue semiconductor laser as the pump source,combined with a folded cavity and innovation coating technology,and utilizing a Brewster-cut BBO crystal for intracavity frequency doubling,TEM00 mode deep UV laser radiation at 275 nm with an output power of 351 mW is obtained.This marks the first report of achieving 275 nm laser generation based on Pr:LiYF4 to date.
基金financially supported by the National Natural Science Foundation of China(Nos.12174451,12474080,and 12274467)the Science and Technology Innovation Program of Hunan Province(No.2022RC1199)the High Performance Computing Center of Central South University,Central South University Graduate Student Independent Exploration and Innovation Project(Nos.2024ZZTS0454 and 2024ZZTS0778).
文摘Wide bandgap semiconductors are ideal materials for ultraviolet(UV)photodetectors due to their stable optoelectronic properties and high efficient UV light absorption.However,photodetectors based on pure wide bandgap semiconductors typically have large dark current that inhibit the devices from generating high UV photoresponse.Herein,a high-voltage-resistant wafer-scale 4H-SiC UV photodetector enabled by electric field distribution modulation is proposed.As the P+region introduced by the ion implantation process affects the electric field distribution and suppresses the Schottky barrier lowering effect,the dark current of the device reaches pA-level,and remains nA-level at a bias voltage of 1 kV.Meanwhile,the device exhibits superior photoresponse,including a prominent responsivity of 105.7 A/W,a remarkable detectivity of 1.01×10^(14) Jones,an outstanding photoconductive gain of 477,and a high light on/off ratio of 1.84×10^(5).This device provides a reliable solution for high-performance UV photodetectors that require high-voltage-resistant in special areas,and the wafer-scale fabrication process makes it feasible for practical applications.
基金Supported by Scientific Research Program of Guangxi University of Chinese Medicine(P200246).
文摘[Objectives] To identify Pyrostegia venusta (Ker-Gawler.) Miers by microscope and ultraviolet spectrum. [Methods] The paraffin section, slide section and freehand section were used to make the cross section of the stem and leaf, and the surface of the leaf and the powder of the root, stem and leaf were made by the conventional method, which were observed under the optical microscope. Ultraviolet-visible spectrum identification was carried out according to a conventional method. [Results] The microscopic identification and ultraviolet-visible absorption characteristics of P. venusta (Ker-Gawler) Miers were described in detail. [Conclusions] This study is expected to provide a reference for the identification of P. venusta(KerGawler)Miers and the establishment of the related quality standard.
基金the National Institute of Standards and Technology(NIST)Physical Measurement Laboratory,Award No.70NANB14H209,through the University of Maryland.O.K.was supported by an appointment to the Intelligence Community Postdoctoral Research Fellowship Program at NIST administered by Oak Ridge Institute for Science and Education(ORISE)through an interagency agreement between the U.S.Department of Energy and the Office of the Director of National Intelligence(ODNI).
文摘Dielectric metasurfaces,composed of planar arrays of subwavelength dielectric structures that collectively mimic the operation of conventional bulk optical elements,have revolutionized the field of optics by their potential in constructing high-efficiency and multi-functional optoelectronic systems on chip.The performance of a dielectric metasurface is largely determined by its constituent material,which is highly desired to have a high refractive index,low optical loss and wide bandgap,and at the same time,be fabrication friendly.Here,we present a new material platform based on tantalum pentoxide(Ta2O5)for implementing high-performance dielectric metasurface optics over the ultraviolet and visible spectral region.This wide-bandgap dielectric,exhibiting a high refractive index exceeding 2.1 and negligible extinction coefficient across a broad spectrum,can be easily deposited over large areas with good quality using straightforward physical vapor deposition,and patterned into high-aspect-ratio subwavelength nanostructures through commonly-available fluorine-gas-based reactive ion etching.We implement a series of highefficiency ultraviolet and visible metasurfaces with representative light-field modulation functionalities including polarization-independent high-numerical-aperture lensing,spin-selective hologram projection,and vivid structural color generation,and the devices exhibit operational efficiencies up to 80%.Our work overcomes limitations faced by scalability of commonly-employed metasurface dielectrics and their operation into the visible and ultraviolet spectral range,and provides a novel route towards realization of high-performance,robust and foundry-manufacturable metasurface optics.
基金This work was supported by National Key R&D Program of China(2022YFB3605103)the National Natural Science Foundation of China(62204241,U22A2084,62121005,and 61827813)+3 种基金the Natural Science Foundation of Jilin Province(20230101345JC,20230101360JC,and 20230101107JC)the Youth Innovation Promotion Association of CAS(2023223)the Young Elite Scientist Sponsorship Program By CAST(YESS20200182)the CAS Talents Program(E30122E4M0).
文摘240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.
基金Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX23_0348)Funding for Outstanding Doctoral Dissertation in Nanjing University of Aeronautics and Astronautics(BCXJ22-14)+1 种基金Fundamental Research Funds for the Central Universities(NC2022008)National Natural Science Foundation of China(11974182,12374257)。
文摘Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p-type(Sb-doped ZnO, ZnO:Sb) and n-type(Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed.
基金the National Natural Science Foundation of China(No.51973080,92066104).
文摘Polymer dielectrics capable of operating efficiently at high electric fields and elevated temperatures are urgently demanded by next-generation electronics and electrical power systems.While inorganic fillers have been extensively utilized to improved high-temperature capacitive performance of dielectric polymers,the presence of thermodynamically incompatible organic and inorganic components may lead to concern about the long-term stability and also complicate film processing.Herein,zero-dimensional polymer dots with high electron affinity are introduced into photoactive allyl-containing poly(aryl ether sulfone)to form the all-organic polymer composites for hightemperature capacitive energy storage.Upon ultraviolet irradiation,the crosslinked polymer composites with polymer dots are efficient in suppressing electrical conduction at high electric fields and elevated temperatures,which significantly reduces the high-field energy loss of the composites at 200℃.Accordingly,the ultraviolet-irradiated composite film exhibits a discharged energy density of 4.2 J cm^(−3)at 200℃.Along with outstanding cyclic stability of capacitive performance at 200℃,this work provides a promising class of dielectric materials for robust high-performance all-organic dielectric nanocomposites.
基金Research of the photoelectric properties of theκ(ε)-Ga_(2)O_(3)films was supported by the Russian Science Foundation,grant number 20-79-10043-P.Fabrication of the ultraviolet detectors based on theκ(ε)-Ga_(2)O_(3)layers was supported by the grant under the Decree of the Government of the Rus-sian Federation No.220 of 09 April 2010(Agreement No.075-15-2022-1132 of 01 July 2022)Research of the structural prop-erties of theκ(ε)-Ga_(2)O_(3)was supported by the St.Petersburg State University,grant number 94034685.
文摘High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.
基金supported by the Key Research and Development Program of Shandong Province(Major Scientific and Technological Innovation Project)(Grant No.2021CXGC011101)National Natural Science Foundation of China(Grant No.51902184)the“Qi-Lu Young Scholar Fund”from Shandong University.
文摘Extensive research has been conducted on visible-light and longer-wavelength infrared-light storage phosphors,which are utilized as promising rewritable memory media for optical information storage applications in dark environments.However,storage phosphors emitting in the deep ultraviolet spectral region(200–300 nm)are relatively lacking.Here,we report an appealing deep-trap ultraviolet storage phosphor,ScBO_(3):Bi^(3+),which exhibits an ultranarrowband light emission centered at 299 nm with a full width at half maximum(FWHM)of 0.21 eV and excellent X-ray energy storage capabilities.When persistently stimulated by longer-wavelength white/NIR light or heated at elevated temperatures,ScBO_(3):Bi^(3+)phosphor exhibits intense and long-lasting ultraviolet luminescence due to the interplay between defect levels and external stimulus,while the natural decay in the dark at room temperature is extremely weak after X-ray irradiation.The impact of the spectral distribution and illuminance of ambient light and ambient temperature on ultraviolet light emission has been studied by comprehensive experimental and theoretical investigations,which elucidate that both O vacancy and Sc interstitial serve as deep electron traps for enhanced and prolonged ultraviolet luminescence upon continuous optical or thermal stimulation.Based on the unique spectral features and trap distribution in ScBO_(3):Bi^(3+)phosphor,controllable optical information read-out is demonstrated via external light or heat manipulation,highlighting the great potential of ScBO_(3):Bi^(3+)phosphor for advanced optical storage application in bright environments.
基金supported by the National Natural Science Foundation of China(Grant Nos.62174113,12174275,and 61874139)the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2019B1515120057,2023A1515140094,and 2023A1515110730)。
文摘In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.
文摘Ultraviolet radiation by its wavelength is divided into: UVA, UVB and UVC. Only UVA and UVB manage to penetrate the ozone layer, but due to anthropological activities, all of them are capable of interacting with humans to a greater or lesser extent, and can generate adverse effects such as cellular stress when interacting with intra-and extracellular biomolecules. The skin is the first organ in contact with UV radiation, and the stress it generates can be analyzed by the expression of a bioindicator of cellular damage such as Hsp70. Therefore, the objective of the project was: to determine the effect of UVA, UVB and UVC radiation on HaCaT epithelial cells, by analyzing the expression of Hsp70. Materials and methods: HaCaT cells were cultured in vitro, which were irradiated with UVA, UVB and UVC light at different doses, to subsequently determine the degree of Hsp70 expression by Immunodetection by PAGE-SDS and Western Blot. Results: Basal expression of Hsp70 was observed in no irradiated HaCaT cells. When HaCaT cells were irradiated with UVA, UVB, UVC, an increase in this Hsp70 protein was observed. With UVA, a higher degree of expression was observed at a time of 30 minutes of irradiation. With UVB the highest expression shifted to a time of 20 minutes. With UVC, overexpression was observed after 10 minutes. Conclusion: UV radiation generates cellular stress on HaCaT cells, evaluated by the stress bioindicator Hsp70. According to the wavelength of UV radiation, those that have a shorter wavelength have a greater potential for cellular damage, such as UVC.
基金Funded by the National Natural Science Foundation of China(Nos.51872214 and 52172124)the Fundamental Research Funds for the Central Universities(WUT:2021Ⅲ019JC and 2018Ⅲ041GX)。
文摘Liquid-phase exfoliation was employed to synthesize Sr_(2)Nb_(3)O_(10) perovskite nanosheets with thicknesses down to 1.76 nm.Transmission electron microscopy(TEM),atomic force microscope(AFM),X-ray photoelectron spectrometer(XPS),and other characterization techniques were used to evaluate the atomic structure and chemical composition of the exfoliated nanosheets.A UV photodetector based on individual Sr_(2)Nb_(3)O_(10) nanosheets was prepared to demonstrate the application of an ultraviolet(UV) photodetector.The UV photodetector exhibited outstanding photocurrent and responsivity with a responsivity of 3×10^(5) A·W^(-1) at 5 V bias under 280 nm illumination,a photocurrent of 60 nA,and an on/off ratio of 3×10^(2).
基金partially supported by National Natural Science Foundation of China(Nos.U23A2077,12175278,12205072)the National Magnetic Confinement Fusion Science Program of China(Nos.2019YFE0304002,2018YFE0303103)+2 种基金the Comprehensive Research Facility for Fusion Technology Program of China(No.2018-000052-73-01-001228)Major Science and Technology Infrastructure Maintenance and Reconstruction Projects of the Chinese Academy of Sciences(2021)the University Synergy Innovation Program of Anhui Province(No.GXXT2021-029)。
文摘A vacuum ultraviolet(VUV)spectroscopy with a focal length of 1 m has been engineered specifically for observing edge impurity emissions in Experimental Advanced Superconducting Tokamak(EAST).In this study,wavelength calibration for the VUV spectroscopy is achieved utilizing a zinc lamp.The grating angle and charge-coupled device(CCD)position are carefully calibrated for different wavelength positions.The wavelength calibration of the VUV spectroscopy is crucial for improving the accuracy of impurity spectral data,and is required to identify more impurity spectral lines for impurity transport research.Impurity spectra of EAST plasmas have also been obtained in the wavelength range of 50–300 nm with relatively high spectral resolution.It is found that the impurity emissions in the edge region are still dominated by low-Z impurities,such as carbon,oxygen,and nitrogen,albeit with the application of fulltungsten divertors on the EAST tokamak.
基金supported by the Guangdong Basic and Applied Basic Research Foundation,China(No.2023A1515012146)the National Natural Science Foundation of China(No.52271083)+1 种基金the Fundamental Research Funds for the Central Universities,China(No.22qntd0801)the Shanghai Engineering Technology Research Centre of Deep Offshore Material,China(No.19DZ2253100)。
文摘The effect of ultraviolet(UV)radiation and biocide benzalkonium chloride(BKC)on fungal-induced corrosion of AA7075 induced by Aspergillus terreus(A.terreus)was deeply studied using analysis of biological activity,surface analysis,and electrochemical measurements.Results demonstrated that the planktonic and sessile spore concentrations decline by more than two orders of magnitude when UV radiation and BKC are combinedly used compared with the control.UV radiation can inhibit the biological activity of A.terreus and influence the stability of passive film of AA7075.Except for direct disinfection,the physical adsorption of BKC on the specimen can effectively inhibit the attachment of A.terreus.The combination of UV radiation and BKC can much more effectively inhibit the corrosion of AA,especially pitting corrosion,due to their synergistic effect.The combined application of UV radiation and BKC can be a good method to effectively inhibit fungal-induced corrosion.
基金supported by National Natural Science Foundation of China(52260012)Natural Science Foundation of Jiangxi Province(20232BAB203053,20212ACB213001,20232BAB203033)+1 种基金General Project of Jiangxi Province Key Research and Development Program(20192BBG70008)Training Plan for Academic and Technical Leaders of Major Disciplines in Jiangxi Province-youth Talent Project(20232BCJ23047).
文摘During wet complexation denitrification of flue gas,Fe^(Ⅱ)EDTA regeneration,also known as reducing Fe^(Ⅱ)EDTA and Fe^(Ⅱ)EDTA-nitric oxide(NO)to Fe^(Ⅱ)EDTA,is crucial.In this paper,ultraviolet(UV)light was used for the first time to reduce Fe^(Ⅱ)EDTA-NO.The experimental result demonstrated that Fe^(Ⅱ)EDTA-NO reduction rate increased with UV power increasing,elevated temperature,and initial Fe^(Ⅱ)EDTA-NO concentration decreasing.Fe^(Ⅱ)EDTA-NO reduction rate increased first and then decreased as pH value increased(2.0-10.0).Fe^(Ⅱ)EDTA-NO reduction with UV irradiation presented a first order reaction with respect to Fe^(Ⅱ)EDTA-NO.Compared with other Fe^(Ⅱ)EDTA regeneration methods,Fe^(Ⅱ)EDTA regeneration with UV show more superiority through comprehensive consideration of regeneration rate and procedure.Subsequently,NO absorption experiment by Fe^(Ⅱ)EDTA solution with UV irradiation confirmed that UV can significantly promote the NO removal performance of Fe^(Ⅱ)EDTA.Appropriate oxygen concentration(3%(vol))and acidic environment(pH=4)was favorable for NO removal.With UV power increasing as well as temperature decreasing,NO removal efficiency rose.In addition,the mechanism research indicates that NO from flue gas is mostly converted to NO_(2)-,NO_(3)-,NH_(4)^(+),N_(2),and N_(2)O with Fe^(Ⅱ)EDTA absorption liquid with UV irradiation.UV strengthens NO removal in Fe^(Ⅱ)EDTA absorption liquid by forming a synergistic effect of oxidation-reduction-complexation.Finally,compared with NO removal methods with Fe^(Ⅱ)EDTA,Fe^(Ⅱ)EDTA combined UV system shows prominent technology advantage in terms of economy and secondary pollution.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11974137,92250306,and 12304302)the National Key Program for Science and Technology Research and Development(Grant No.2019YFA0307700)+1 种基金the Natural Science Foundation of Jilin Province,China(Grant Nos.YDZJ202101ZYTS157 and YDZJ202201ZYTS314)the Scientific Research Foundation of Jilin Provincial Education Department,China(Grant No.JJKH20230283KJ)。
文摘In high harmonic generation(HHG),Laguerre–Gaussian(LG) beams are used to generate extreme ultraviolet(XUV)vortices with well-defined orbital angular momentum(OAM),which have potential applications in fields such as microscopy and spectroscopy.An experimental study on the HHG driven by vortex and Gaussian beams is conducted in this work.It is found that the intensity of vortex harmonics is positively correlated with the laser energy and gas pressure.The structure and intensity distribution of the vortex harmonics exhibit significant dependence on the relative position between the gas jet and the laser focus.The ring-like structures observed in the vortex harmonics,and the interference of quantum paths provide an explanation for the distinct structural characteristics.Moreover,by adjusting the relative position between the jet and laser focus,it is possible to discern the contributions from different quantum paths.The optimization of the HH vortex field is applicable to the XUV,which opens up a new way for exploiting the potential in optical spin or manipulating electrons by using the photon with tunable orbital angular momentum.
文摘I reminisce on my early life in Section 1;on my education in Sections 2 and 3;on the years at Princeton as a research astronomer in Section 4;on the years on the faculty at Chicago in Section 5;on research on Diffuse Interstellar Bands(DIBs) in Section 6;on construction of the 3.5 m telescope at Apache Point Observatory(APO)in Section 7;on work on the Sloan Digital Sky Survey(SDSS) in Section 8;on work in public education in Chicago in Section 9;and on my travels in Section 10. My main science research is of an observational nature,concerning Galactic and intergalactic interstellar gas. Highlights for me included my work on the orbiting telescope Copernicus, including the discovery of interstellar deuterium;early observations of absorption associated with fivetimes ionized oxygen;and discoveries concerning the phases of gas in the local interstellar medium, based on previously unobservable interstellar UV spectral lines. With other instruments and collaborations, I extended interstellar UV studies to the intergalactic cool gas using quasi-stellar object QSO absorption lines redshifted to the optical part of the spectrum;provided a better definition of the emission and morphological character of the source of absorption lines in QSO spectra;and pursued the identification of the unidentified DIBs. For several of these topics, extensive collaborations with many scientists were essential over many years. The conclusions developed slowly, as I moved from being a graduate student at Chicago, to a research scientist position at Princeton and then to a faculty position at Chicago. At each stage of life, I was exposed to new technologies adaptable to my science and to subsequent projects. From high school days, I encountered several management opportunities which were formative. I have been extremely fortunate both in scientific mentors I had and in experimental opportunities I encountered.
文摘Wireless ultraviolet communication is a new type of communication mode. It refers to the transmission of information through the scattering of ultraviolet light by atmospheric particles and aerosol particles. The scattering characteristics can enable the wireless ultraviolet communication system to transmit ultraviolet light signals in a non-line-of-sight manner, which overcomes the weakness that other free space optical communications must work in a line-of-sight manner. Based on the basic theory of scattering and absorption in atmospheric optics, taking the ultraviolet light with a wavelength of 266 nm as an example, this paper introduces the classical model of non-line-of-sight single-scattering coplanarity based on the ellipsoid coordinate system. The model is used to simulate and analyze the relationship between the geometric parameters such as transmission distance, transceiver elevation angle and transceiver half-angle and the received optical power per unit area. The performance of non-line-of-sight ultraviolet communication system in rain and fog environment is discussed respectively. The results show that the transmission quality of non-line-of-sight ultraviolet atmospheric propagation is greatly affected by the communication distance. As the distance increases, the received light power per unit area gradually decreases. In addition, increasing the emission elevation angle, the receiving elevation angle and the receiving half angle is an important way to improve the system performance.
基金supported by the Research Project of Aerospace Information Research Institute,Chinese Academy of Sciences (Grant Nos.E1Z1D101 and E2Z2D101)the Project of Chinese Academy of Sciences (Grant No.E33310030D)the Guangzhou Basic and Applied Basic Research Foundation (Grant Nos.2023A04J0336 and 2023A04J0021).
文摘A 60-mW solid-state deep ultraviolet(DUV)laser at 193 nm with narrow linewidth is obtained with two stages of sum frequency generation in LBO crystals.The pump lasers,at 258 and 1553 nm,are derived from a homemade Yb-hybrid laser employing fourth-harmonic generation and Er-doped fiber laser,respectively.The Yb-hybrid laser,finally,is power scaling by a 2 mm×2 mm×30 mm Yb:YAG bulk crystal.Accompanied by the generated 220-mW DUV laser at 221 nm,the 193-nm laser delivers an average power of 60 mW with a pulse duration of 4.6 ns,a repetition rate of 6 kHz,and a linewidth of∼640 MHz.To the best of our knowledge,this is the highest power of 193-and 221-nm laser generated by an LBO crystal ever reported as well as the narrowest linewidth of 193-nm laser by it.Remarkably,the conversion efficiency reaches 27%for 221 to 193 nm and 3%for 258 to 193 nm,which are the highest efficiency values reported to date.We demonstrate the huge potential of LBO crystals for producing hundreds of milliwatt or even watt level 193-nm laser,which also paves a brand-new way to generate other DUV laser wavelengths.
