A CuPc/SiO2 sample is fabricated. Its morphology is characterized by atomic force microscopy, and the electron states are investigated by X-ray photoelectron spectroscopy. In order to investigate these spectra in deta...A CuPc/SiO2 sample is fabricated. Its morphology is characterized by atomic force microscopy, and the electron states are investigated by X-ray photoelectron spectroscopy. In order to investigate these spectra in detail, all of these spectra are normalized to the height of the most intense peak,and each component is fitted with a single Gaussian function. Analysis shows that the O element has great bearing on the electron states and that SiO2 layers produced by spurting technology are better than those produced by oxidation technology.展开更多
Slag movement on SiO2-based prism refractories in different slag systems was observed. The cross section shape evolution mechanism was discussed. Two types of shape evolution appear. For PbO-SiO2 slag whose surface te...Slag movement on SiO2-based prism refractories in different slag systems was observed. The cross section shape evolution mechanism was discussed. Two types of shape evolution appear. For PbO-SiO2 slag whose surface tension improves with SiO2 concentration, slag film flows up along four edges under axial Marangoni shear force and wettability. Then, it flows down along four lateral faces under gravity. Corrosion rate at edges is larger than that on lateral faces due to different SiO2 solubilities of ascending and descending flow. Prism cross section shape changes from square to round. For FetO-SiO2 slag whose surface tension reduces with the increase of SiO2 concentration, slag film flows up under the inflence of wettability. Then, it flows down under Marangoni shear force and gravity. Compared to four edges, slag is mainly up and down on four lateral faces due to larger surface tension and size. So, prism cross section shape keeps square.展开更多
Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established the...Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established theoretical models under the K-point space of periodic boundary condition. The structures after optimization have been analyzed, and the results show that the interfaces present in disordered state and both Si-O-Si and Si=O structures exist. Meanwhile, the bonding of surface structure is analyzed via the graphics of electron localization function（ELF）.展开更多
Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemic...Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an "intermixing layer" at the SiO2/Ta interface due to a thermody-namically favorable reaction: 15 SiO2+37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.展开更多
文摘A CuPc/SiO2 sample is fabricated. Its morphology is characterized by atomic force microscopy, and the electron states are investigated by X-ray photoelectron spectroscopy. In order to investigate these spectra in detail, all of these spectra are normalized to the height of the most intense peak,and each component is fitted with a single Gaussian function. Analysis shows that the O element has great bearing on the electron states and that SiO2 layers produced by spurting technology are better than those produced by oxidation technology.
基金Projects(U1738101,51804023)supported by the National Natural Science Foundation of ChinaProjects(FRF-TP-18-007A1,FRF-MP-18-007)supported by Fundamental Research Funds for the Central Universities,ChinaProject(2019M650489)supported by China Postdoctoral Science Foundation
文摘Slag movement on SiO2-based prism refractories in different slag systems was observed. The cross section shape evolution mechanism was discussed. Two types of shape evolution appear. For PbO-SiO2 slag whose surface tension improves with SiO2 concentration, slag film flows up along four edges under axial Marangoni shear force and wettability. Then, it flows down along four lateral faces under gravity. Corrosion rate at edges is larger than that on lateral faces due to different SiO2 solubilities of ascending and descending flow. Prism cross section shape changes from square to round. For FetO-SiO2 slag whose surface tension reduces with the increase of SiO2 concentration, slag film flows up under the inflence of wettability. Then, it flows down under Marangoni shear force and gravity. Compared to four edges, slag is mainly up and down on four lateral faces due to larger surface tension and size. So, prism cross section shape keeps square.
基金Supported by the National Grand Fundamental Research 973 Program of China (No. 51310Z07-3) and the Research Program of Application of Sichuan Department of Science and Technology (No. 02GY029-006)
文摘Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established theoretical models under the K-point space of periodic boundary condition. The structures after optimization have been analyzed, and the results show that the interfaces present in disordered state and both Si-O-Si and Si=O structures exist. Meanwhile, the bonding of surface structure is analyzed via the graphics of electron localization function（ELF）.
基金This work was supported by the Natural Science Foundation of Beijing (Grant Nos. 2012011 and 19890310).
文摘Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an "intermixing layer" at the SiO2/Ta interface due to a thermody-namically favorable reaction: 15 SiO2+37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.
